Advanced Surface Coatings: A Handbook of Surface Engineering 1991
DOI: 10.1007/978-94-011-3040-0_5
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Sputter deposition

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Cited by 6 publications
(3 citation statements)
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“…At low N 2 flow rate, all the reactive gas is gettered by the Ti and Al atoms ejected from the target. Consequently, the partial pressure practically does not change, and the sputtering yield is high 21 . At about (8.7 ± 0.1) sccm, the partial pressure of N 2 changes abruptly due to a slight change in the reactive gas flow.…”
Section: Hysteresis Processmentioning
confidence: 99%
“…At low N 2 flow rate, all the reactive gas is gettered by the Ti and Al atoms ejected from the target. Consequently, the partial pressure practically does not change, and the sputtering yield is high 21 . At about (8.7 ± 0.1) sccm, the partial pressure of N 2 changes abruptly due to a slight change in the reactive gas flow.…”
Section: Hysteresis Processmentioning
confidence: 99%
“…It was reported that the sputtering yield of carbon accounts for only $20% of the sputtering yields of Ti and V under Ar-ion bombardment. 47 Consequently, the different sputtering yields resulted in preferential sputtering removal of elements other than carbon during the ion beam milling, which thereafter left an almost pure carbon top layer on the surface of the foil.…”
Section: Tem-eels Analysismentioning
confidence: 99%
“…The earliest form of PVD is sputtering, which was first conceptualized by E.R. Grove in 1842 with his discovery that the surface of a solid could be eroded by an impinging flux of accelerated positive ions Rohde and Munz (1991). These processes have been used to deposit films of metals, alloys, metal oxides, and some composite materials on various substrates.…”
Section: Physical Vapor Deposition Techniquesmentioning
confidence: 99%