2003
DOI: 10.1098/rsta.2003.1304
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Sputter-depth profiling for thin-film analysis

Abstract: Following a brief historical background, the concepts and the present state of sputter-depth profiling for thin-film analysis are outlined. There are two main branches: either the removed matter (as in mass- or optical-spectroscopy-based secondary-ion mass spectrometry or glow-discharge optical emission spectroscopy), or the remaining surface (as in Auger electron spectroscopy and X-ray photoelectron spectroscopy) is characterized. These complementary methods show the same result if there is no preferential sp… Show more

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Cited by 42 publications
(7 citation statements)
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References 84 publications
(114 reference statements)
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“…In particular, Figure reports the profiles obtained in the case of delta layers located at different depth, but all within a distance from the surface comparable or lower than that of the interaction depth of the primary ion (i.e., in the region where D ≠ 0). In each simulated profile, both the broadening and the maximum shift increase for deeper and deeper original position of the layer, in very good agreement with the results reported in the literature. The case of a thicker layer, initially located at a depth where D ≈ 0 and with a thickness wider than D , is shown in Figure . Again, the results of our simulation are in excellent agreement with previous results. …”
Section: Resultssupporting
confidence: 88%
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“…In particular, Figure reports the profiles obtained in the case of delta layers located at different depth, but all within a distance from the surface comparable or lower than that of the interaction depth of the primary ion (i.e., in the region where D ≠ 0). In each simulated profile, both the broadening and the maximum shift increase for deeper and deeper original position of the layer, in very good agreement with the results reported in the literature. The case of a thicker layer, initially located at a depth where D ≈ 0 and with a thickness wider than D , is shown in Figure . Again, the results of our simulation are in excellent agreement with previous results. …”
Section: Resultssupporting
confidence: 88%
“…In each simulated profile, both the broadening and the maximum shift increase for deeper and deeper original position of the layer, in very good agreement with the results reported in the literature. The case of a thicker layer, initially located at a depth where D ≈ 0 and with a thickness wider than D , is shown in Figure . Again, the results of our simulation are in excellent agreement with previous results. …”
Section: Resultssupporting
confidence: 88%
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“…The zero depth interface width as a function of the primary ion energy is shown in Figure b. Lower impact energy clearly leads to better depth resolution, a finding that is well-known for inorganic systems . This effect is understandable since the zero depth interface width depends upon the altered layer thickness, which increases with increasing energy.…”
Section: Resultsmentioning
confidence: 64%
“…The improvement is even more dramatic for 40 keV projectiles, where the ejection depth is reduced from ∼14 nm to ∼3 nm when the impact angle is changed from 0° to 60°. This phenomenon is known from studies on inorganic systems and model calculations. , However, the degree of the improvement observed in LB systems could not be anticipated from previous studies of cluster induced sputtering.…”
Section: Resultsmentioning
confidence: 84%