A theoretical model to describe the evolution of microstructure of thin films and densification by ion assistance is proposed. In the model kinetics of point defects, including their interaction with voids and with the growing film surface, is considered. To solve the set of equations a computer code was developed. Film densification by ion bombardment is investigated as a function of ion energy and the ratio of ion-to-vapour current densities. It is shown that there are optimal ion energy and ratio of ion-to-vapour fluxes for obtaining dense coating with high growth rate.