As a promising lead-free ferroelectric,
BiFeO3 has a
very large intrinsic polarization of ∼100 μC/cm2, enabling its great potential in electronic applications especially
in a film format. In this sense, reliable ferroelectric properties
are desired; however, pure-phase BiFeO3 films are notorious
for their large leakage current, especially of those processed by
using the sol–gel methoda facile and industrially scalable
method for film preparation. In this study, a protection layer, which
can be easily integrated in the sol–gel process, is used to
ensure the acquirement of remnant polarization of ∼65 μC/cm2 in ∼200 nm BiFeO3 thin films, whereas O2 annealing can enhance that to ∼120 μC/cm2 in ∼400–700 nm films. Reliable ferroelectricity
of BiFeO3 films on Si wafers within a wide thickness range
was thus achieved. The obtained ferroelectricity is among the best-achieved
properties to date of BiFeO3 films for both thin and intermediate
thicknesses, including both chemically and physically derived. These
results are helpful to advance potential use of sol–gel-processed
BiFeO3 films in electromechanical devices with different
desired thicknesses.