2012
DOI: 10.1063/1.3679003
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Sputter-prepared BiFeO3(001) films on L1 FePt(001)/glass substrates

Abstract: The preparation of BFO films by sputtering at a temperature as low as 450 °C on glass and commercial Pt/Ti/SiO2/Si(001) substrates have been studied. The underlayers with different orientations were prepared on the glass substrates including strongly textured Pt(111) and L10-FePt(001) induced by rapid thermal annealing process. Isotropic perovskite BFO grains with size of about 200 nm formed on the commercial substrates, showing larger surface roughness. Pt(111) suppresses BiFeO3 phase. Single phase perovskite… Show more

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Cited by 18 publications
(6 citation statements)
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“…Comparison of ferroelectric properties of pure-phase BiFeO 3 films with reported achievable large polarizations: (a) films obtained by the sol–gel method (green ■: epitaxial and textured films; red ● and magenta ●: polycrystalline films from the literature , and evaluated in this study, respectively); (b) films fabricated by physical deposition methods (green ■, dark green ■, and light green ■: epitaxial and textured films by PLD, rf magnetron sputtering, and MBE methods; red ●: polycrystalline films ).…”
Section: Resultsmentioning
confidence: 99%
“…Comparison of ferroelectric properties of pure-phase BiFeO 3 films with reported achievable large polarizations: (a) films obtained by the sol–gel method (green ■: epitaxial and textured films; red ● and magenta ●: polycrystalline films from the literature , and evaluated in this study, respectively); (b) films fabricated by physical deposition methods (green ■, dark green ■, and light green ■: epitaxial and textured films by PLD, rf magnetron sputtering, and MBE methods; red ●: polycrystalline films ).…”
Section: Resultsmentioning
confidence: 99%
“…Then, the wafers were cut into several small pieces to investigate different conditions of ML stack processing. The BFO and BTO dielectric was deposited on Pt/TiO 2 /SiO 2 /Si (100) via RF magnetron sputtering [10][11][12] at a substrate temperature of 27 and 750 • C, respectively. The detailed process parameters are summarized in Table 1.…”
Section: Methodsmentioning
confidence: 99%
“…9 Recently, the studies for adopting FePt alloy to the magnetic layer of ferroelectric/ ferromagnetic heterojunction have been conducted due to its excellent magnetic properties. 16 In this paper, BaTiO 3 (BTO) layer was used as a ferroelectric substrate since BTO has small lattice mismatch with FePt ($1%). The influence of ferroelectric polarization of BTO substrate on the MAE of FePt/BTO was investigated by density functional theory (DFT) based ab-initio simulations.…”
mentioning
confidence: 99%