2011
DOI: 10.1016/j.nimb.2010.12.068
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Sputtered neutral SinCm clusters as a monitor for carbon implantation during C60 bombardment of silicon

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Cited by 4 publications
(4 citation statements)
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“…In the remaining m ≥ 2 progression, the neutral clusters exhibit a monotonic decrease with increasing size, i.e., number of indium atoms, which closely follows that observed for the pure indium clusters. This finding is in marked contrast with a similar experiment performed on silicon . In that case, the neutral Si m C, Si m C 2 , and Si m C 3 clusters showed pronounced yield maxima at m = 2, 1 and 2, respectively, which could be explained by the fact that these clusters exhibit the largest dissociation threshold (i.e., the lowest dissociation energy for loss of a Si atom).…”
Section: Results and Discussioncontrasting
confidence: 95%
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“…In the remaining m ≥ 2 progression, the neutral clusters exhibit a monotonic decrease with increasing size, i.e., number of indium atoms, which closely follows that observed for the pure indium clusters. This finding is in marked contrast with a similar experiment performed on silicon . In that case, the neutral Si m C, Si m C 2 , and Si m C 3 clusters showed pronounced yield maxima at m = 2, 1 and 2, respectively, which could be explained by the fact that these clusters exhibit the largest dissociation threshold (i.e., the lowest dissociation energy for loss of a Si atom).…”
Section: Results and Discussioncontrasting
confidence: 95%
“…In general, it is well-known that ion bombardment leads to the implantation of projectile constituents at or slightly below the bombarded surface. For the specific case of C 60 bombardment, molecular dynamics (MD) simulations , as well as experimental data reveal that at least part of the constituent carbon atoms are being implanted, leading to a buildup of a surface carbon concentration with increasing C 60 + ion fluence, until at some point a steady state between implantation and resputtering is reached. In the context of the present work, the interesting question is to what extent the formation of sputtered In m C n is influenced by such an effect.…”
Section: Results and Discussionmentioning
confidence: 99%
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“…This approach can thus serve as a general and effective method for producing novel carbidic species, which usually do not exist as a stable bulk form. Earlier C 60 impact induced reactions were studied mainly for keV C 60 collisions with silicon, which readily produced the stable bulk carbide form of silicon. The strong silicon carbon binding interactions in the bulk resulted in efficient carbon trapping and implantation, growth of silicon carbide, and emission of silicon carbide clusters. Recently, we have shown that impact of fullerene (C 60 – ) ions on gold and silver metallic targets (which do not form stable carbides) at kinetic energies of several keV constitutes an efficient way of generating the rarely observed gold and silver carbide cluster ions.…”
Section: Introductionmentioning
confidence: 99%