1992
DOI: 10.1143/jjap.31.4210
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Sputtered W-Ti Film for X-Ray Mask Absorber

Abstract: Properties of DC-sputtered W-Ti absorber films such as internal stress, density and microstructure were systematically investigated for X-ray mask application. Smooth, stress-free amorphous W-Ti films with a comparatively high density of 16.5-17.0 g/cm3 were obtained by optimizing several conditions: gas pressure, N2 content in the working gas, DC power density and annealing temperature. The reproducibility of the film stress was about ±5×107 Pa. Reproducibility was found to be mainly determined by the degree … Show more

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Cited by 19 publications
(6 citation statements)
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“…In order to make the W-Ti film amorphous, nitrogen (N 2 ) is added to the argon ͑Ar͒ working gas. 16 The stress of the amorphous W-Ti absorber is known to be stable against x-ray exposure 17 and in an air atmosphere. 18,19 We have investigated this material for a long time, and have developed some techniques to control its stress.…”
Section: A Calculation Conditions On Resist Absorption In Pxl-iimentioning
confidence: 99%
“…In order to make the W-Ti film amorphous, nitrogen (N 2 ) is added to the argon ͑Ar͒ working gas. 16 The stress of the amorphous W-Ti absorber is known to be stable against x-ray exposure 17 and in an air atmosphere. 18,19 We have investigated this material for a long time, and have developed some techniques to control its stress.…”
Section: A Calculation Conditions On Resist Absorption In Pxl-iimentioning
confidence: 99%
“…To meet 0.1 jam ULSI design role, the absorber should have a tensile stress less than 5• l0 s dyne/cm: and be stable within --+5 • 107 dyne/cm 2 [6]. Among the several candidate materials like Au [7,8], Ta [2,9,10], W [11,12] metals and their compounds [3,4,[13][14][15][16][17], W has long been studied as an absorber material for x-ray mask, due to its comparable thermal expansion with membrane materials, a relatively high Young's modulus and the possibility of dry etching. However, W film has a problem of stress instability due to oxygen diffusion along the grain boundary of columnar structure [6].…”
Section: 1ntroductonmentioning
confidence: 99%
“…It is known that the density of film deposited by sputtering strongly depends on the sputtering pressure [6,15]. Fig.…”
Section: Initial Characteristics and Reliability Of Sputterdeposited mentioning
confidence: 99%
“…Recently, compounds of Ta or W, such as Ta 4 B, TaSiN, and WTi, have come into use as absorber materials because these materials are amorphous and their stress can be controlled more easily than that of Ta or W. [6][7][8] However, there have been no reports which have systematically investigated the characteristics of Ta or W compounds. For this reason, we have systematically investigated the characteristics of binary tantalum alloys and deposited selected materials by rf sputtering.…”
Section: Introductionmentioning
confidence: 99%