Sputtering and structural modifications induced in silicon dioxide (SiO2) thin films under (10–40 MeV) Auq+heavy ion irradiation
Ster Mammeri,
Mhamed Salhi,
Abir Boubir
et al.
Abstract:Surface sputtering and structural modifications induced in silicon dioxide thin films (SiO2/Si) deposited on silicon substrates and irradiated by swift (10–40 MeV) heavy Auq+ (q = +4, +6, +7, and +9) ions were investigated by grazing‐incidence X‐ray diffraction (GIXRD) spectroscopy, Rutherford backscattering (RBS) spectrometry and time‐of‐flight elastic recoil detection (ToF‐ERDA) technique. The GIXRD analysis of the as‐deposited and irradiated samples revealed increasing structural modifications of the SiO2 t… Show more
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