Sputtering Gas Pressure Dependence on the LaB&lt;sub&gt;x&lt;/sub&gt;N&lt;sub&gt;y&lt;/sub&gt; Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer

HONG, Eun-Ki; PARK, Kyung Eun; Ohmi, Shun–ichiro

doi:10.1587/transele.2021fup0005

Cited by 1 publication

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“…[7][8][9][10][11][12] We have reported the prototype of pentacene-based FG type Au/pentacene/N-doped LaB 6 (Metal: M)/LaB x N y (Insulator: I)/N-doped LaB 6 (M)/LaB x N y (I)/n + -Si(100) (Semiconductor: S) MIMIS organic field-effect transistor (OFET) without isolation of the devices. 13) Most of the FG OFET NVMs using the organic-based tunnel layer (TL) and block layer (BL) have been reported without device isolation. [14][15][16][17][18] For the isolation of the FG NVMs, the gate stacked layers should be defined and isolated to prevent leakage currents between the source (S) and drain (D) electrodes through the metal FG.…”

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confidence: 99%

3 V operation of pentacene-based floating-gate memory realized by the isolation process with Ar/N₂-plasma nitridation for N-doped LaB₆ metal and high-k LaB _x N_y insulator stacked structure

HONG¹,

Ohmi²

2023

Jpn. J. Appl. Phys.

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In this paper, we have investigated low-voltage operation of pentacene-based floating-gate (FG) memory utilizing nitrogen-doped (N-doped) LaB6 metal and LaBxNy insulator stacked structure. The pentacene-based FG Au/pentacene/N-doped LaB6(Metal: M)/ LaBxNy (Insulator: I)/ N-doped LaB6(M)/LaBxNy(I)/n+-Si(100) (Semiconductor: S) MIMIS organic field-effect transistor (OFET) was fabricated by utilizing the Ar/N2-plasma nitridation to isolate the edge region of the N-doped LaB6 FG with Au source/ drain (S/D) electrodes. The Ar/N2-plasma nitridation was found to be effective in suppressing the leakage current between the Au S/D electrodes and N-doped LaB6 FG. The pentacene-based FG memory was successfully developed with the memory window (MW) of 0.71 V and the saturation mobility (µsat) of 1.8×10-2 cm2/(V·s), under pulse input of ±3.4 V/10 ms due to the small equivalent oxide thickness (EOT) of 3.1 nm. Furthermore, MW of 0.4 V was obtained under minimum program/erase pulse amplitude/width of ±3 V/100 µs at the process temperature of 200 °C.

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Section: Introductionmentioning

confidence: 99%

3 V operation of pentacene-based floating-gate memory realized by the isolation process with Ar/N₂-plasma nitridation for N-doped LaB₆ metal and high-k LaB _x N_y insulator stacked structure

HONG¹,

Ohmi²

2023

Jpn. J. Appl. Phys.

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Sputtering Gas Pressure Dependence on the LaB<sub>x</sub>N<sub>y</sub> Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer

Cited by 1 publication

References 35 publications

3 V operation of pentacene-based floating-gate memory realized by the isolation process with Ar/N₂-plasma nitridation for N-doped LaB₆ metal and high-k LaB _x N_y insulator stacked structure

3 V operation of pentacene-based floating-gate memory realized by the isolation process with Ar/N₂-plasma nitridation for N-doped LaB₆ metal and high-k LaB _x N_y insulator stacked structure

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Sputtering Gas Pressure Dependence on the LaB<sub>x</sub>N<sub>y</sub> Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer

Cited by 1 publication

References 35 publications

3 V operation of pentacene-based floating-gate memory realized by the isolation process with Ar/N2-plasma nitridation for N-doped LaB6 metal and high-k LaB x Ny insulator stacked structure

3 V operation of pentacene-based floating-gate memory realized by the isolation process with Ar/N2-plasma nitridation for N-doped LaB6 metal and high-k LaB x Ny insulator stacked structure

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3 V operation of pentacene-based floating-gate memory realized by the isolation process with Ar/N₂-plasma nitridation for N-doped LaB₆ metal and high-k LaB _x N_y insulator stacked structure

3 V operation of pentacene-based floating-gate memory realized by the isolation process with Ar/N₂-plasma nitridation for N-doped LaB₆ metal and high-k LaB _x N_y insulator stacked structure