Sputtering-induced surface roughness of metallic thin films

Marton, D.; Fine, Joseph

doi:10.1016/0040-6090(90)90008-2

Cited by 33 publications

(17 citation statements)

References 26 publications

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“…The fitted c 3 value of ~1 implies that the roughness parameter increases linearly with sputtered depth for sputtering of the three Al films. This result is consistent with the one predicted by a statistical model for columnar grain structure . Indeed, the growth model of evaporated Al exhibits a columnar grain structure …”

Section: Resultssupporting

confidence: 91%

Quantification of AES depth profiling data of polycrystalline Al films with Gaussian and non‐Gaussian surface height distributions

Jian

Liu

Wang

et al. 2013

Surface & Interface Analysis

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Sputtering-induced roughness is the main distortional factor on the depth resolution of measured depth profiles, in particular, for sputtering of polycrystalline metals. Frequently, the surface height distribution of the sputtering-induced roughness exhibits an asymmetrical feature. In such a case, a non-Gaussian height distribution function (HDF) has to be applied for the quantification of a measured depth profile. By replacing the usually applied Gaussian HDF with that of an asymmetrical triangle in the Mixing-Roughness-Information depth model, measured Auger electron spectroscopy depth profiling data of the interface of polycrystalline Al films on Si are perfectly fitted. The asymmetric triangle height distributions obtained from the best fit are a reasonable approximation of the height distributions measured by atomic force microscopy.

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Section: Resultssupporting

confidence: 91%

Quantification of AES depth profiling data of polycrystalline Al films with Gaussian and non‐Gaussian surface height distributions

Jian

Liu

Wang

et al. 2013

Surface & Interface Analysis

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“…Sputtered metallic thin films on an underlying surface universally exhibit a certain roughness 39 . It is logical that this roughness is a function of the amount of material deposited and that also the wetting/adhesion characteristics of the underlying substrate play a role 40 .…”

Section: Discussionmentioning

confidence: 99%

Improving the engine power of a catalytic Janus-sphere micromotor by roughening its surface

Longbottom

Bon

2018

Sci Rep

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Microspheres with catalytic caps have become a popular model system for studying self-propelled colloids. Existing experimental studies involve predominantly “smooth” particle surfaces. In this study we determine the effect of irregular surface deformations on the propulsive mechanism with a particular focus on speed. The particle surfaces of polymer microspheres were deformed prior to depositing a layer of platinum which resulted in the formation of nanoscopic pillars of catalyst. Self-propulsion was induced upon exposure of the micromotors to hydrogen peroxide, whilst they were dispersed in water. The topological surface features were shown to boost speed (~2×) when the underlying deformations are small (nanoscale), whilst large deformations afforded little difference despite a substantial apparent catalytic surface area. Colloids with deformed surfaces were more likely to display a mixture of rotational and translational propulsion than their “smooth” counterparts.

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“…5,[9][10][11][12][13][14][15][16][17][18][19][20][21][22] Correlations between topography development and both degradation of the depth resolution 2 ,O-H and changes in secondary ion yields have also been studied. At the beginning of a depth profile, the effects of ion-induced mixing and preferential sputtering are established as steadystate sputtering conditions are achieved.…”

Section: Introductionmentioning

confidence: 99%

Ion-induced topography, depth resolution, and ion yield during secondary ion mass spectrometry depth profiling of a GaAs/AlGaAs superlattice: Effects of sample rotation

Cirlin

Vajo

Doty

et al. 1991

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Quantitative depth profiling resonance ionization mass spectrometry of GaAs/AlGaAs heterojunction bipolar transistors J. Vac. Sci. Technol. B 10, 385 (1992); 10.1116/1.586363High resolution secondary ion mass spectrometry depth profiling using continuous sample rotation and its application to superlattice and deltadoped sample analysis Effects of sample rotation and sputtering conditions on the depth resolution and ion yield during secondary ion mass spectrometry (SIMS) sputter depth profiles have been studied on bulk GaAs and a GaAs( 5 nm)/ Alo 3 GIlo. 7 As(5 nm) superiattice. Profiles without sample rotation with 1.0-7.0 keY O 2 + show a rapid degradation of the depth resolution with increasing sputter depth. Profiles with Ar + show only slight degradation. Scanning electron microscope (SEM) studies indicate that degradation is associated with development of periodic surface ripples. The wavelength of the ripples is energy dependent and increases with increasing ion impact energy. With sample rotation, no degradation of the depth resolution is observed and SEM micrographs indicate that surfaces sputtered with rotation are smooth. In addition, with 3.0 keY at significant changes in the secondary ion yield of AsO + from bulk GaAs are observed at a depth of -200 nm. No changes are observed with sample rotation. Our results demonstrate that sample rotation during SIMS depth profiling prevents and can reverse the development of surface topography that both degrades depth resolution and changes secondary ion yield. Thus, interpretation and quantitation of SIMS analysis is facilitated.

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Sputtering-induced surface roughness of metallic thin films

Cited by 33 publications

References 26 publications

Quantification of AES depth profiling data of polycrystalline Al films with Gaussian and non‐Gaussian surface height distributions

Quantification of AES depth profiling data of polycrystalline Al films with Gaussian and non‐Gaussian surface height distributions

Improving the engine power of a catalytic Janus-sphere micromotor by roughening its surface

Ion-induced topography, depth resolution, and ion yield during secondary ion mass spectrometry depth profiling of a GaAs/AlGaAs superlattice: Effects of sample rotation

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