Sputtering pressure dependence of microstructure and magnetoresistance properties of non-uniform Co–ZnO nanocomposite film

Sun, Aoke; Zhang, Yiwen; Wu, Zhong; Qin, Zhenbo; Ji, Huiming; Liu, Xinjun; Luo, Junpeng; Hu, Wenbin

doi:10.1016/j.jmmm.2024.171886

Cited by 1 publication

(1 citation statement)

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“…However, an excess of crystal defects can pose challenges for device properties and reliability. Therefore, strategies such as growth pressure control or the adoption of laminated structure growth have been reported to improve the quality of thin films grown by RF sputtering [ 22 , 23 ]. In addition, the most effective way to improve the film quality is known to be thermal treatment [ 24 ].…”

Section: Introductionmentioning

confidence: 99%

Improvements in Resistive and Capacitive Switching Behaviors in Ga2O3 Memristors via High-Temperature Annealing Process

Lee,

Kim,

Kim

et al. 2024

Materials

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This study investigates the effect of a high-temperature annealing process on the characteristics and performance of a memristor based on a Ag/Ga2O3/Pt structure. Through X-ray diffraction analysis, successful phase conversion from amorphous Ga2O3 to β-Ga2O3 is confirmed, attributed to an increase in grain size and recrystallization induced by annealing. X-ray photoelectron spectroscopy analysis revealed a higher oxygen vacancy in annealed Ga2O3 thin films, which is crucial for conductive filament formation and charge transport in memristors. Films with abundant oxygen vacancies exhibit decreased set voltages and increased capacitance in a low-resistive state, enabling easy capacitance control depending on channel presence. In addition, an excellent memory device with a high on/off ratio can be implemented due to the reduction of leakage current due to recrystallization. Therefore, it is possible to manufacture a thin film suitable for a memristor by increasing the oxygen vacancy in the Ga2O3 film while improving the overall crystallinity through the annealing process. This study highlights the significance of annealing in modulating capacitance and high-resistive/low-resistive state properties of Ga2O3 memristors, contributing to optimizing device design and performance. This study underscores the significance of high-temperature annealing in improving the channel-switching characteristics of Ga2O3-based memristors, which is crucial for the development of low-power, high-efficiency memory device.

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Section: Introductionmentioning

confidence: 99%