1983
DOI: 10.1016/0022-3093(83)90383-6
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Stability and new structure in a-Si:H photoconductive sensors

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Cited by 7 publications
(1 citation statement)
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“…Many researchers started applying α-Si:H technology to image-sensing applications as early as 20 years ago, but the unstable response and low energy-transfer efficiency due to photo-induced defects impeded further investigation. 9,10 We have developed a new approach for improving long-term photo-stability using high-energy-laser exposure. The instant high-energy light exposure process causes the α-Si:H to reach a saturated state of photo-induced dangling bonds.…”
Section: Laser Stabilization Of Photosensormentioning
confidence: 99%
“…Many researchers started applying α-Si:H technology to image-sensing applications as early as 20 years ago, but the unstable response and low energy-transfer efficiency due to photo-induced defects impeded further investigation. 9,10 We have developed a new approach for improving long-term photo-stability using high-energy-laser exposure. The instant high-energy light exposure process causes the α-Si:H to reach a saturated state of photo-induced dangling bonds.…”
Section: Laser Stabilization Of Photosensormentioning
confidence: 99%