Stability Control of Composition of RF-Sputtered Pb(Zr, Ti)O<sub>3</sub> Ferroelectric Thin Film

Suu, Koukou; Osawa, Akira; Nishioka, Yutaka; Tani, N.

doi:10.1143/jjap.36.5789

Cited by 27 publications

(14 citation statements)

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“…2 Deposition condition of titanium thin film and the result Various deposition methods of a metal thin film which have been tried so far include sputtering, the MOCVD (Metal Organic Chemical Vapor Deposition) method (14) and the sol-gel process (15) . Among them, the sputtering method was employed in this study according to its relatively easy deposition, slight composition deviation of a film, and excellent homogeneity of thickness and film properties in a large diameter substrate (16) . To investigate mechanical and electric properties of a thin film deposited on the above-mentioned substrate in this study, a titanium thin film was deposited on the surface of these specimens using a RF magnetron sputtering system (O-naru Tech Corp. and Osaka Vacuum Ltd.,: N-SPCVD-11) under deposition conditions shown in Table 1.…”

Section: Specimen and Depositionmentioning

confidence: 99%

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Processing and Functional Evaluation of Titanium Thin Films for Biomimetic Micro Actuator

Sakai¹,

Hoshiai

Nakamachi

2005

JSME Int. J., Ser. A

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Titanium (Ti) thin films were created on glass and Pb(Zr,Ti)O 3 (PZT) substrates using magnetic RF sputtering apparatus. Nano-indentation tests were carried out to study the influence of the Ti thin layer on piezoelectric properties. The piezoelectric properties of the PZT plate and a Ti sputtered one were also measured by laser Doppler vibrometer. Furthermore, some characteristics, such as crystalline structure, depth profiles, and surface roughness of the films were observed by means of an atomic force microscope (AFM). Main conclusions obtained in this study are summarized as follows: (1) From detailed observation and analytical results of AFM, the surface roughness, R a , tends to increase as Ti film thickness increases.(2) Some of the mechanical properties, such as reduced modulus E r and hardness H obtained from nano-indentation tests, are significantly related to film thickness. (3) The validity of piezoelectric finite element analysis (ANASYS program) for deformation of a piezoelectric material was investigated. As a result, piezoelectric response properties are present in asreceived PZT specimens and Ti-sputtered PZT specimens. Experimental and FE analytical results indicate that the piezoelectric coefficient is significantly influenced by Ti layer.

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Section: Specimen and Depositionmentioning

confidence: 99%

“…It is known that DC sputtering generally provides higher deposition efficiency than RF sputtering; it further provides a higher deposition rate equal power is input to a target (16) . This occurs because DC sputtering has high plasma density and high adsorption ability of metal atoms.…”

Section: Specimen and Depositionmentioning

confidence: 99%

Processing and Functional Evaluation of Titanium Thin Films for Biomimetic Micro Actuator

Sakai¹,

Hoshiai

Nakamachi

2005

JSME Int. J., Ser. A

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“…SrBi 2 Nb 2 O 9 (SBN) and SrBi 2 Ta 2 O 9 (SBT) have attracted attention of researchers in recent years as potential materials to replace lead zirconate titanate (PZT) for ferroelectric random access memories (FeRAMs) applications [1][2][3][4][5]. Large remanent polarization, low coercive field, low leakage current, high Curie temperature, lower sintering temperature and being lead free are some of the important characteristics which make SrBi 2 Nb 2 O 9 an alternative to PZT for FeRAM applications [6][7][8] 4+ , V 5+ etc.…”

Section: Introductionmentioning

confidence: 99%

Structural and electrical properties of SrBi2V x Nb2−x O9 ferroelectric ceramics: Effect of temperature and frequency

Jain

Jha

2008

J Electroceram

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Aurivillius type bismuth layered materials have received a lot of attention because of their application in ferroelectric non-volatile random access memories. Among bismuth layer structured ferroelectric ceramics SrBi 2 Ta 2 O 9 (SBT)/SrBi 2 Nb 2 O 9 (SBN) are of great interest for researchers because of their fatigue resistance and less distorted structure. Recently vanadium substitution in SBN/SBT has shown interesting electric and dielectric properties. In the present work, processing conditions, microstructure and electrical studies of vanadium doped SBN ferroelectric ceramics have been performed. Samples of compositions SrBi 2 V x Nb 2-x O 9 , x=0.0, 0.1, 0.3, 0.5 were prepared by solid-state reaction technique using high purity oxides / carbonates. The samples were calcined at 700°C and sintered at 800°C. X-ray diffractograms show that a single phase layered perovskite structure is formed in all the samples. Effect of partial substitution of pentavalent niobium ion (0.68 Å) by smaller pentavalent vanadium ion (0.59 Å) at B site on the microstructure, Curie temperature, Dielectric constant, Dielectric loss and electrical conductivity have been investigated. Dielectric properties of SBVN have been investigated from room temperature to 500°C and frequency of 100 Hz to 1 MHz. Dielectric constant values at their respective Curie points are observed to increase with increasing vanadium concentration. Curie temperature is observed to be maximum in x=0.1 vanadium doped sample. Strong relaxor like dielectric relaxation at the transition temperatures have been observed. With increasing vanadium concentration the dielectric loss is observed to increase significantly. It is also observed that dielectric loss increases with increase in temperature. The variation of conductivities in these samples is also reported.

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“…Now, BST thin films have been deposited by some deposition techniques. Among these techniques, RF magnetron sputtering is thought to be suitable for mass-production because of its stability and reproducibility as well as good film performances [4].…”

Section: Introductionmentioning

confidence: 99%

RF Magnetron Sputtering Process for (Ba,Sr)TiO₃ Thin Films with Higher Dielectric Constant

et al. 2003

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Ba,Sr)TiO 3 (BST) films were deposited by RF magnetron sputtering using BST sintered ceramic targets and an approach to deposit BST films with higher permittivity by sputtering deposition was explored aiming to the application of thin film capacitor, RF tunable components and so on.Basic sputtering conditions such as RF power, deposition temperature and so on were varied in this study. BST films and Pt/BST/Pt capacitors were investigated by electrical properties, XRD analysis and SEM observation. It became clear that deposition temperature, deposition rate, and BST film thickness were important parameters for optimization of the dielectric constant. From the non-linearly relationship between dielectric constant and BST film thickness, we could also find that the interfacial layer between BST and Pt bottom electrode was important for controlling the BST film properties. Furthermore, an approach to enhance the crystalline quality has to be explored for further improvement of BST film properties. Dielectric constant could be raised up to 10% by just changing the gas flow sequence of BST sputtering process.

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Stability Control of Composition of RF-Sputtered Pb(Zr, Ti)O₃ Ferroelectric Thin Film

Cited by 27 publications

References 14 publications

Processing and Functional Evaluation of Titanium Thin Films for Biomimetic Micro Actuator

Processing and Functional Evaluation of Titanium Thin Films for Biomimetic Micro Actuator

Structural and electrical properties of SrBi2V x Nb2−x O9 ferroelectric ceramics: Effect of temperature and frequency

RF Magnetron Sputtering Process for (Ba,Sr)TiO₃ Thin Films with Higher Dielectric Constant

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Stability Control of Composition of RF-Sputtered Pb(Zr, Ti)O3 Ferroelectric Thin Film

Cited by 27 publications

References 14 publications

Processing and Functional Evaluation of Titanium Thin Films for Biomimetic Micro Actuator

Processing and Functional Evaluation of Titanium Thin Films for Biomimetic Micro Actuator

Structural and electrical properties of SrBi2V x Nb2−x O9 ferroelectric ceramics: Effect of temperature and frequency

RF Magnetron Sputtering Process for (Ba,Sr)TiO3 Thin Films with Higher Dielectric Constant

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Product

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Stability Control of Composition of RF-Sputtered Pb(Zr, Ti)O₃ Ferroelectric Thin Film

RF Magnetron Sputtering Process for (Ba,Sr)TiO₃ Thin Films with Higher Dielectric Constant