Stability enhancement and resistance drift suppression of antimony thin films by hafnium oxide interlayers

Xu, Jun; Hu, Yifeng

doi:10.1016/j.jmrt.2022.04.133

Cited by 14 publications

(3 citation statements)

References 55 publications

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“…The RESET voltage of the irradiated device increases to 3.81 V, and the resistance contrast is substantial, exceeding 2 orders of magnitude, ensuring precise resistance state identification. By measuring the RESET voltage, we can accurately assess the power consumption of PCM devices during the RESET operation E normalR normalE normalS normalE normalT = V normalR normalE normalS normalE normalT 2 × t R S E T where E RESET , V RESET , t , and R SET are the power consumption, RESET voltage, pulse width, and SET resistance, respectively. According to the formula, the RESET power consumption of the PCM device irradiated by UV light for 0 and 8 h are 2.68 × 10 –11 and 4.84 × 10 –11 J, respectively.…”

Section: Resultsmentioning

confidence: 99%

Effect of Ultraviolet Radiation on Properties of Ge₂Sb₂Te₅ Phase Change Films

Wang,

Hu,

Zhu

2024

Langmuir

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With the expanding utilization of space technology, the stability of electronic components' performance in radiation environments has garnered significant attention. In this study, we prepared Ge 2 Sb 2 Te 5 phase change films and memory units on silicon substrates to explore the influence of ultraviolet (UV) radiation on their characteristics. The experimental findings revealed that UV irradiation at a power density of 450 mW/cm 2 decreased the amorphous resistance and thermal stability of Ge 2 Sb 2 Te 5 films, impeding their multistage storage performance. Nevertheless, the amorphous state could still undergo effective transformation into a crystalline state. Furthermore, UV irradiation triggered the photoelectric effect, narrowing the band gap and causing a redshift of the Raman peak in amorphous films. Remarkably, the surface properties of Ge 2 Sb 2 Te 5 films remained unchanged under irradiation. The phase change memory device based on Ge 2 Sb 2 Te 5 film retained its SET−RESET conversion capability at a pulse width of 100 ns post-UV irradiation, demonstrating resilience against UV radiation. This study offers the practical insights for the application of phase change memory in space radiation environments.

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Section: Resultsmentioning

confidence: 99%

Effect of Ultraviolet Radiation on Properties of Ge₂Sb₂Te₅ Phase Change Films

Wang,

Hu,

Zhu

2024

Langmuir

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“…The resistance drift of pure Sb is large (0.1296 ± 0.0009), which is not conducive to the accurate reading of resistance states in Figure 5. When the proportion of the In2Se3 interlayer in the multilayer composite film increases, the drift index of the film declines to 0.0238 ± 0.0005 of [IS(4 nm)/Sb(6 nm)]5, which indicates that the stability of the film resistance is improved [27]. The photoelectron spectroscopy of the [IS(4 nm)/Sb(6 nm)]20 film was tested to analyze the interactions between atoms in the IS/Sb multilayer composite film.…”

Section: Resultsmentioning

confidence: 99%

Enhancing the Thermal Stability and Reducing the Resistance Drift of Sb Phase Change Films by Adding In2Se3 Interlayers

Zhu

et al. 2023

Coatings

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In this paper, pure Sb and composite multilayer In2Se3/Sb thin films were prepared on a SiO2/Si substrate. The effects of the addition of In2Se3 interlayers on the physical and electrical properties of phase change thin films were investigated. Compared with pure Sb film, the composite multilayer In2Se3/Sb film had a higher crystallization temperature (~145 °C), larger crystallization activation energy (~2.48 eV), less resistance drift (~0.0238) and better thermal stability. The results of X-ray photoelectron spectroscopy indicated that the In-Sb bond was formed in the multilayer In2Se3/Sb film. The near infrared spectrophotometer showed that the band gap changed at different annealing temperatures. Changing the annealing temperature of the film allowed for the phase structure of the film to be studied by using X-ray diffractometer. The surface morphology and electrostatic potential at different annealing temperatures were using atomic force microscope. It was found that the flat film had a smoother surface. Phase-change memory devices based on [In2Se3(4 nm)/Sb(6 nm)]8 film reduced power consumption by approximately 74% compared to pure Sb film. In conclusion, the In2Se3 interlayers effectively inhibited the resistance drift of the phase change thin film and enhanced its thermal stability.

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“…The references show that Sb phase change material is the optimal material for high speed PCM because of its simple structure, nucleation and low crystallization temperature 34 . In order to further improve the thermal stability of Sb phase change materials, the nanoscale composite of Ge material and Sb was carried out by stacking multiple layers.…”

Section: Introductionmentioning

confidence: 99%

Phase transition and electrical conversion properties of Ge/Sb nano-multilayer films on flexible substrates

Wang,

Hu,

2024

npj Flex Electron

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Flexible information memory is the key component of flexible electronic devices and the core of intelligent wearable devices. In this paper, Ge/Sb multilayer phase change films of various thickness ratios were prepared using polyether ether ketone as substrate, and their flexible phase change properties and device conversion characteristics were studied. After bending for 100000 times and bending experiments with different bending radius, the film can still realize the transition from amorphous to crystalline states, and the resistance fluctuation was small. Bending, stretching and pressing of the film resulted in grain refinement and increasing of crystalline resistance. The flexible electronic devices using Ge/Sb multilayer films were prepared. The phase change memory device can realize reversible conversion between SET and RESET states with different pulse widths in flat, bent states and after bending many times. All findings show that Ge/Sb multilayer films on PEEK substrate have broad application prospects in high-performance flexible memory in the future.

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Stability enhancement and resistance drift suppression of antimony thin films by hafnium oxide interlayers

Cited by 14 publications

References 55 publications

Effect of Ultraviolet Radiation on Properties of Ge₂Sb₂Te₅ Phase Change Films

Effect of Ultraviolet Radiation on Properties of Ge₂Sb₂Te₅ Phase Change Films

Enhancing the Thermal Stability and Reducing the Resistance Drift of Sb Phase Change Films by Adding In2Se3 Interlayers

Phase transition and electrical conversion properties of Ge/Sb nano-multilayer films on flexible substrates

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Stability enhancement and resistance drift suppression of antimony thin films by hafnium oxide interlayers

Cited by 14 publications

References 55 publications

Effect of Ultraviolet Radiation on Properties of Ge2Sb2Te5 Phase Change Films

Effect of Ultraviolet Radiation on Properties of Ge2Sb2Te5 Phase Change Films

Enhancing the Thermal Stability and Reducing the Resistance Drift of Sb Phase Change Films by Adding In2Se3 Interlayers

Phase transition and electrical conversion properties of Ge/Sb nano-multilayer films on flexible substrates

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Product

Resources

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Effect of Ultraviolet Radiation on Properties of Ge₂Sb₂Te₅ Phase Change Films

Effect of Ultraviolet Radiation on Properties of Ge₂Sb₂Te₅ Phase Change Films