Stability of 8-hydroxyquinoline aluminum films encapsulated by a single Al2O3 barrier deposited by low temperature atomic layer deposition

Maindron, Tony; Simon, Jean-Yves; Viasnoff, Emilie; Lafond, D.

doi:10.1016/j.tsf.2012.07.043

Cited by 15 publications

(5 citation statements)

References 26 publications

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“…ALD is a promising tool for production of moisture barriers on substrates for OLED applications,14 and has recently been suggested for the deposition of Al 2 O 3 barriers directly on the Alq 3 material 15. For such applications it is important to identify any incompatibility between the Alq 3 material and the deposited film.…”

Section: Introductionmentioning

confidence: 99%

Molecular Hybrid Structures by Atomic Layer Deposition – Deposition of Alq₃, Znq₂ and Tiq₄ (q = 8‐hydroxyquinoline)

Nilsen

Haug

Finstad

et al. 2013

Chemical Vapor Deposition

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Atomic layer deposition (ALD) is traditionally used for deposition of inorganic compounds, metals, organic polymers, and hybrid inorganic/organic materials. In all these materials, the structural framework is based on covalent or metallic bonds. The present paper demonstrates the growth of thin films of metal-organic films in which weak Van der Waals forces are important. Thin films of metal quinolines based on 8-hydroxyquinoline (q) and aluminum (Alq 3 ), zinc (Znq 2 ), and titanium (possibly Tiq 4 ) have been deposited using ALD in the temperature range 85-200 8C. The growth rates decrease with increasing temperature from 0.7-0.4 nm per cycle at 85 8C, to zero at 200 8C. The growth dynamics have been investigated using a quartz crystal microbalance (QCM). It is found that an excess of metal precursor will etch the films. The Alq 3 material is stable towards exposure to water during deposition. The photoluminescent properties of selected metal quinoline films are reported.

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Section: Introductionmentioning

confidence: 99%

Molecular Hybrid Structures by Atomic Layer Deposition – Deposition of Alq₃, Znq₂ and Tiq₄ (q = 8‐hydroxyquinoline)

Nilsen

Haug

Finstad

et al. 2013

Chemical Vapor Deposition

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“…Finally, an additional high refractive index capping layer has been added onto the cathode surface to complete the top‐emitting OLED stack. This layer helps to prevent degradation that may be induced by the ALD process used for the deposition of the first inorganic layer directly onto the OLED stack as it is known that precursors used in ALD, especially water, but also metalorganic precursors can be somehow detrimental to the OLED. In the meantime, the high refractive index allows improving the light output from the high optical index device to the air .…”

Section: Resultsmentioning

confidence: 99%

Curved OLED microdisplays

et al. 2019

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Technical background for CMOS substrate thinning of CEA‐LETI (historically developed for through silicon via technology as well as for more recent activity to provide curved image sensors, for IR as well as for visible spectra) has been applied to realize curved OLED‐based microdisplays. It will be shown that test OLEDs made onto silicon wafers as well as 873 × 500 WVGA, 0.38″ diagonal, and an innovative 1920 × 1200 WUXGA, 1″diagonal, CMOS‐based microdisplays can be curved at R = 45 mm radius of curvature (1D) with no negative impact onto the circuit electrical characteristics. This feature can allow significant innovation on the system and application because it can help to redesign simpler and lighter optical engine systems, in the same manner as for curved image sensors. These results can be obtained owing to the integration of a new protective hard coat layer that has been used in conjunction with a robust thin‐film encapsulation to protect OLEDs from mechanical ingress (from process steps and handling) and oxidizing gas of the atmosphere, respectively. Results have been produced within the framework of the EU‐funded, H2020 project, called Large cost‐effective OLED MIcroDisplays (LOMID and their applications).

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“…Therefore, an efficient gas diffusion barrier layer is required to prevent oxygen readsorption. Aluminum oxide (Al 2 O 3 ) films deposited by ALD have been demonstrated to act as an excellent gas diffusion barrier for organic light emitting devices (OLEDs) because of their pinhole-free characteristic. − In this work, Al 2 O 3 protection layers were deposited in open-air, low-temperature (60 °C) conditions with our AP-SALD system.…”

Section: Resultsmentioning

confidence: 99%

Increasing the Electron Mobility of ZnO-Based Transparent Conductive Films Deposited by Open-Air Methods for Enhanced Sensing Performance

Nguyễn

Bellet

Masenelli

et al. 2018

ACS Appl. Nano Mater.

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The development of open-air, high-throughput, low-cost thin film fabrication techniques has immense potential and interest in optoelectronics. However, the oxygen-rich atmosphere associated with such processes can have detrimental effects on the electrical properties of the deposited films. An example of this is found in materials based on ZnO, for which atmospheric processing results in low mobility values. This stems mainly from adsorbed oxygen species at the grain boundaries, which limit carrier transport. This paper describes the effect of a low-temperature UV treatment on the electrical properties of ZnO and aluminum doped zinc oxide (ZnO:Al) films deposited by atmospheric pressure spatial atomic layer deposition (AP-SALD). Because of the mild UV treatment, a significant decrease in the amount of oxygen traps at the grain boundaries has been observed. This results in a large improvement of the carrier mobility, up to 47 times for undoped ZnO and 16 times for ZnO:Al. The effect of temperature (RT to 220 °C) during the UV treatment on the conductivity of undoped ZnO and ZnO:Al films is discussed. The study of the time-dependent conductivity of ZnO and ZnO:Al films using tunneling emission based models provides a simple means for extracting the grain boundary trap density, a critical parameter in semiconductors that is usually not easy to estimate. We show that the high conductivity of the UV-treated films can be preserved when exposed to oxygen at high temperature because of a very thin alumina (Al2O3) barrier layer. Finally, we demonstrate that the effect of UV illumination of thin ZnO films deposited in oxidizing atmospheres can be used to design improved UV or oxygen sensors.

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Stability of 8-hydroxyquinoline aluminum films encapsulated by a single Al2O3 barrier deposited by low temperature atomic layer deposition

Cited by 15 publications

References 26 publications

Molecular Hybrid Structures by Atomic Layer Deposition – Deposition of Alq₃, Znq₂ and Tiq₄ (q = 8‐hydroxyquinoline)

Molecular Hybrid Structures by Atomic Layer Deposition – Deposition of Alq₃, Znq₂ and Tiq₄ (q = 8‐hydroxyquinoline)

Curved OLED microdisplays

Increasing the Electron Mobility of ZnO-Based Transparent Conductive Films Deposited by Open-Air Methods for Enhanced Sensing Performance

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Stability of 8-hydroxyquinoline aluminum films encapsulated by a single Al2O3 barrier deposited by low temperature atomic layer deposition

Cited by 15 publications

References 26 publications

Molecular Hybrid Structures by Atomic Layer Deposition – Deposition of Alq3, Znq2 and Tiq4 (q = 8‐hydroxyquinoline)

Molecular Hybrid Structures by Atomic Layer Deposition – Deposition of Alq3, Znq2 and Tiq4 (q = 8‐hydroxyquinoline)

Curved OLED microdisplays

Increasing the Electron Mobility of ZnO-Based Transparent Conductive Films Deposited by Open-Air Methods for Enhanced Sensing Performance

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Product

Resources

About

Molecular Hybrid Structures by Atomic Layer Deposition – Deposition of Alq₃, Znq₂ and Tiq₄ (q = 8‐hydroxyquinoline)

Molecular Hybrid Structures by Atomic Layer Deposition – Deposition of Alq₃, Znq₂ and Tiq₄ (q = 8‐hydroxyquinoline)