Cesium-based all-inorganic perovskites have witnessed extraordinary advances owing to their eye-catching thermal-resistance and photoelectric properties in optoelectronics and photonics application, including solar cells, [1-5] light-emitting diodes, [6,7] photodetectors, [8,9] nanolasers application, [9,10] and so on. In particular, inducing a prominent trade-off between the light absorption and phase stability in comparison with CsPbBr 3 and CsPbI 3 perovskites, [11-13] the mixed-halide inorganic CsPbI 2 Br perovskites with the suitable bandgap have great potential in the application of burgeoning tandem solar cells and semitransparent photovoltaic devices. [14-16] Unfortunately, the serious energy losses (E loss) derived from deleterious nonradiative recombination [17,18] and inimical phase transformation to photo-non-active phase upon exposing to high humidity environment [15,19] are still the primary bottleneck hindering the further commercialization. Consequently, fabricating efficient and stable CsPbI 2 Br perovskite solar cells (PSCs) is a challenging but crucial and meaningful task. It is widely reported that the proliferated dangling bonds at the grain boundaries cause the formation of undesired point defects that result in the carrier recombination and propel the phase transformation to nonfunctional δ phase. [20-22] Moreover, the inimical pinholes caused by poor crystallization make grain boundaries the most susceptible to external erosion, such as moisture and oxygen. [23-25] Thus, considering that the detrimental nonradiative recombination and moisture-driven phase transformation preferentially occur along the weakest grain boundaries region, modulating perovskite crystallization to lower grain boundaries density and passivating defects at the grain boundaries are desirable for fabricating high-quality and stable perovskite films. [26,27] In the past few years, for achieving this target, quite a few strategies have been proposed, [28-37] among which, additive engineering has significantly encouraged the improvement of power conversion efficiency (PCE) performance and stability. [38,39] The reported additives not only gift perovskite films with enhanced crystallinity along with enlarged grain size, but also are advantageous to passivate defect states, thereby lessening the detrimental carrier recombination. Moreover, it is worthwhile mentioning that many additives play a crucial role in the stability improvement. Ma et al. found that guanidinium cations (GA þ) additives in the substitutional sites of perovskite lattice could stabilize the α phase and facilitate a high crystalline CsPbI 2 Br through the relaxation of the lattice strain and the formation of hydrogen bonds, which renders a low fabrication temperature of 140 C. Moreover, GA þ-mediated devices exhibited the superior moisture stability and decreased by only 6% of origin PCE value after 1000 h aging. [31] Wang et al. judiciously incorporated CuBr 2