Stability of carbon-supported catalysts in an oxidizing environment

Nickel-Catalyzed Conversion of Activated Carbon Extrudates into High Surface Area Silicon Carbide by Reactive Chemical Vapour Deposition

“…These figures are used to investigate the possible existence of diffusional limitations in this system of carbon conversion. Figure 11 shows the overall rates of CH 4 and SiC formation for carbon conversions of 3600 s utilizing 2, 5, and 8 wt% Ni on carbon. The values given in Fig.…”

“…This process is typical for situations in which the substrate consists of one of the constituents of the whisker. Motojima and Hasegawa (27) grew β-SiC whiskers utilizing a gas mixture containing Si 2 Cl 6 , CH 4 , H 2 , and Ar. Several metallic components (group VIIIa of the periodic system according to IUPAC) have been investigated for their catalytic effect on whisker growth.…”

“…Kinetically controlled processes, however, will cause the formation of smooth surfaces. With the aid of thermal gravimetric analysis (TGA) the reaction rate of CH 4 and SiC formation has been determined. These figures are used to investigate the possible existence of diffusional limitations in this system of carbon conversion.…”

“…Gaseous silicon tetrachloride (SiCl 4 ) or methyl trichlorosilane (MTS, CH 3 SiCl 3 ) were introduced using argon as carrier gas, while the pressure of the saturator was kept constant at 100 kPa. The flow rates of SiCl 4 and CH 3 SiCl 3 were determined using their Antoine equations (14,15) and amounted to 0.14 mol/h and 0.18 mol/h, respectively. After reaction the reactor was pressurized to 100 kPa and cooled down under flowing hydrogen to room temperature.…”

DEVELOPMENT OF HIGH ACTIVITY, CATALYTIC SYSTEMS FOR NOx REDUCTION

“…Thus CO acts as the reducing agent in this reaction. The use of carbon as a catalyst support is also well established (Inui et al, 1982;Stegenga et al, 1989;and Illán-Gómez et al, 1995).…”