Stability of Molybdenum Schottky Contact to Silicon Carbide

Nishikawa, Katsuzo; Foster, B.; Iwakuro, Hiroaki

doi:10.4028/www.scientific.net/msf.353-356.611

MSF

2001

DOI: 10.4028/www.scientific.net/msf.353-356.611

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Stability of Molybdenum Schottky Contact to Silicon Carbide

Katsuzo Nishikawa

B. Foster

Hiroaki Iwakuro

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Cited by 3 publications

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“…Therefore both Cu and Ti can reduce the amount of graphite precipitation. Mo showed a large amount of graphite in this work despite Mo 2 C is formed at 900 o C[7]. It suggests that Mo silicides or Si rich carbosilicides are formed at 1000 o C as in Refs [4,8]…”

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confidence: 54%

Ohmic Contact for C-face n-Type 4H-SiC with Reduced Graphite Precipitation

Maeyama

Nishikawa

Fukuda

et al. 2006

MSF

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The characteristics of Ni, Monel (Ni-Cu alloy, Ni55mol%-Cu45mol%), Monel/Si, Ni/Ti/Ni and Mo electrodes were studied for ohmic contact to C-face N-type 4H-SiC. Low contact resistivity (ρC) was not compatible with reduction of graphite precipitation in the case of Ni, Monel, Ni/Ti/Ni, and Mo electrodes. Monel/Si achieved less graphite precipitation and low ρC, which is enough to apply for actual rectifier, because a Monel/Si electrode forms a silicide without reaction between the deposits and the substrate.

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supporting

confidence: 54%

Ohmic Contact for C-face n-Type 4H-SiC with Reduced Graphite Precipitation

Maeyama

Nishikawa

Fukuda

et al. 2006

MSF

Self Cite

View full text Add to dashboard Cite

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Silicon carbide and silicon carbide-based structures

Masri¹

2002

Surface Science Reports

114

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Contact formation in SiC devices

Pécz

2001

Applied Surface Science

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Stability of Molybdenum Schottky Contact to Silicon Carbide

Cited by 3 publications

References 0 publications

Ohmic Contact for C-face n-Type 4H-SiC with Reduced Graphite Precipitation

Ohmic Contact for C-face n-Type 4H-SiC with Reduced Graphite Precipitation

Silicon carbide and silicon carbide-based structures

Contact formation in SiC devices

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