Stability of sulfur-passivated facets of InGaAs-AlGaAs laser diodes

Beister, G.; Maege, J.; Sebastian, J.; Erbert, G.; Weixelbaum, L.; Weyers, M.; Würfl, Joachim; Daga, O. P.

doi:10.1109/68.531810

Cited by 12 publications

(6 citation statements)

References 6 publications

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“…Alternatively, the cleaving of the facets may take place in air or in an atmosphere of an inert gas. Both approaches, however, require additional cleaning, e. g., by ion-beam [45] or hydrogen-plasma etching [16], and passivation, e. g., by nitridation [46] or sulphation [41,47,48]. Extra processes such as InGaP-or ZnSe-epitaxy [42,49] are applied as well.…”

Section: Robustness Of Diode Lasers Against Codmentioning

confidence: 99%

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

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Semiconductor lasers are the most efficient manmade narrow-band light sources and convert up to threequarters of electric energy into light. High-power diode lasers are characterized by very high internal power densities in their small cavity, resulting in local heating and sometimes device degradation. Catastrophic optical damage (COD) of diode lasers is a relevant degradation mechanism and limit for reaching ultrahigh optical powers. An overview is given on research activities targeting the mechanisms being relevant for the COD process in GaAs-based diode lasers emitting in the 630-1100 nm range. The discussion of experiments, where COD is artificially provoked, represents the main topic. The sequence of events and fast kinetics taking place on a nanosecond to microsecond time scale are addressed. A particular emphasis is laid on recent experimental work performed in the authors' laboratories. Paving the way for knowledge-based solutions towards more robust diode lasers represents the ultimate goal of this work. COD diagram determined for a batch of broad-area AlGaAs diode lasers. The time to COD within a single current pulse is plotted versus the actual average optical power in the moment when the COD takes place. Full circles stand for clearly identified COD events (right ordinate), whereas open circles (left ordinate) represent the pulse duration in experiments, where no COD has been detected. A borderline (gray) exists between two regions, i. e., parameter sets, of presence (orange) and absence of COD (blue). This borderline is somewhat blurred because of the randomness in filamentation of the laser nearfield and scatter in properties of the involved individual devices.

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Section: Robustness Of Diode Lasers Against Codmentioning

confidence: 99%

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

View full text Add to dashboard Cite

show abstract

“…The next one is success in performing an iterative fitting procedure between simulated and measured P-V, P-I and I-V characteristics for the whole current range. This procedure is described in [10][11][12]. Modelling of P is based on the analytical solution of the current spreading problem, as outlined in the preceding subsection and in appendix A, and explained in appendix B.…”

Section: Extraction Of Radiative Current Component and Fitting Proced...mentioning

confidence: 99%

“…The experiments were carried out at InGaAs/AlGaAs ridge waveguide (RW) laser structures. We realized, by surface treatments with NH 4 S x resulting in a decrease of I nr over more than one order of magnitude, that the observed changes, I nr , of I nr are due to surface reactions only [11,12].…”

Section: Introductionmentioning

confidence: 97%

Comparison of surface and bulk contributions to non-radiative currents in InGaAs/AlGaAs laser diodes

Beister

Wenzel

2004

Semicond. Sci. Technol.

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We present novel investigations of surface and bulk contributions to the non-radiative recombination in InGaAs/AlGaAs (λ = 0.98 µm) RW laser diodes. These enable us to explain earlier experiments, in which we extracted the non-radiative and the radiative current components from the power-voltage-current (P-V-I ) characteristics measured well below the threshold. From these experiments, the non-radiative current component was identified as primarily related to surface recombination, which increased during facet degradation, and could be decreased by a sulfur treatment. In this paper, we use these experimental results to estimate the drop of the surface recombination velocity after the sulfur treatment and to give an upper bound for the bulk carrier lifetimes. This is done by simulations of the V-I characteristics assuming that all non-radiative recombination takes place either at the surface or in the bulk.

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“…8,10,20 Surface currents are the most likely explaination. 1,2,8,10,20 Diode lasers with a QD active layer offer a variety of advantages compared to conventional devices such as QW lasers. 21 Obviously, the reduced combined density of states reduces the lasing threshold.…”

Section: Discussionmentioning

confidence: 99%

Analysis of heat flows and their impact on the reliability of high-power diode lasers

et al. 2003

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Facet overheating is considered a potential source for device degradation of diode lasers. We test two different concepts for the reduction of facet temperatures of high-power diode lasers by measuring the facet temperatures by means of Raman spectroscopy. For conventional high-power broad area lasers we demonstrate the reduction of the facet overheating by the introduction of current blocking layers by a factor of 3-4. For another set of devices among them quantum well and quantum-dot lasers with almost the same device design we find a reduction of the overheating by 40 to 60 percent for the dot devices. Thus we qualify two very different but promising technological approaches for increasing device reliability

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Stability of sulfur-passivated facets of InGaAs-AlGaAs laser diodes

Cited by 12 publications

References 6 publications

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Comparison of surface and bulk contributions to non-radiative currents in InGaAs/AlGaAs laser diodes

Analysis of heat flows and their impact on the reliability of high-power diode lasers

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