2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) 2012
DOI: 10.1109/istdm.2012.6222505
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Stability of Tensile-Strained Ge Studied by Transmission Electron Microscopy

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“…Little wavelength shift was observed for weakly strained waveguides, while highly strained waveguides had weak PL intensity. 300 K data is © 2012 IEEE and reprinted, with permission, from IEEE Proceedings [1].…”
Section: Figurementioning
confidence: 99%
See 1 more Smart Citation
“…Little wavelength shift was observed for weakly strained waveguides, while highly strained waveguides had weak PL intensity. 300 K data is © 2012 IEEE and reprinted, with permission, from IEEE Proceedings [1].…”
Section: Figurementioning
confidence: 99%
“…Tensile-strained germanium has been studied as a possible laser material due to its nearly-direct bandgap [1,2] and its compatibility with conventional silicon integrated circuit fabrication [3][4][5][6]. Theoretically, a tensile strain of 0.7% (hydrostatic) or 1.4% (biaxial) could produce a direct bandgap in Ge [7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%