Stability study: Transparent conducting oxides in chemically reactive plasmas

Manjunatha, Krishna Nama

doi:10.1016/j.apsusc.2017.03.173

Cited by 10 publications

(5 citation statements)

References 30 publications

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“…Such finding was also observed by several studies that have reported a change in the color after annealing or hydrogen plasma treatment in FTO thin films which resulted in a higher absorption near the UV region. 59–61 In addition, this further supports the previous statement suggesting the presence of multi-photon absorption since this process involves high energy (3–4 eV) photochemical reactions which favor changes in the chemistry of materials. In contrast, linear absorption of IR photon induces melting o ablation of material mainly by photothermal processes.…”

Section: Resultssupporting

confidence: 87%

“…Such finding was also observed by several studies that have reported a change in the color after annealing or hydrogen plasma treatment in FTO thin films which resulted in a higher absorption near the UV region. [59][60][61] Fig. 4 (a) Total transmittance, reflectance, (b) diffuse transmittance, and (c) absorption of structured FTO films for selected fluence values (continuous lines).…”

Section: Optical Characterizationmentioning

confidence: 99%

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Effects of sub-picosecond direct laser interference patterning on the optoelectronic properties of fluorine-doped tin oxide thin films

et al. 2022

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Section: Resultssupporting

confidence: 87%

“…Such finding was also observed by several studies that have reported a change in the color after annealing or hydrogen plasma treatment in FTO thin films which resulted in a higher absorption near the UV region. [59][60][61] Fig. 4 (a) Total transmittance, reflectance, (b) diffuse transmittance, and (c) absorption of structured FTO films for selected fluence values (continuous lines).…”

Section: Optical Characterizationmentioning

confidence: 99%

Effects of sub-picosecond direct laser interference patterning on the optoelectronic properties of fluorine-doped tin oxide thin films

et al. 2022

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“…In addition, microwave plasma with H can effectively reduce SiO 2 to Si which then reacts with N. In particular, atomic hydrogen may play a critical role on nitridation. The diffusion rate of atomic hydrogen from the plasma might be faster than that of nitrogen toward the SiO 2 /Si interface to delaminate the oxide layer, whereas hydrogen can reduce the oxide surface to expose the bare Si surface which may have a slow reaction with N in comparison with the SiO reaction with N to form Si 3 N 4 [32,33]. The accelerated nitriding rates due to the interaction of hydrogen with native oxide on the surface of the Si particles were observed in previous studies [34,35].…”

Section: Discussionmentioning

confidence: 99%

Formation of Aligned α-Si3N4 Microfibers by Plasma Nitridation of Si (110) Substrate Coated with SiO2

Chiu

Dung

et al. 2021

Coatings

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Plasma nitridation of an amorphous SiO2 layer on Si (110) substrate can form well-aligned α-Si3N4 crystallites in fibrous morphology. Nitriding is performed at a temperature in the range of 800–1000 °C by using microwave plasma with a gas mixture of N2 and H2. Raman spectroscopy shows the characteristics of an α-Si3N4 phase without other crystalline nitrides. As shown by scanning electron microscopy, the formed α-Si3N4 microfibers on the Si substrate can be in a dense and straight array nearly along with Si <11¯0>, and can have a length over 2 mm with a diameter in the range of 5–10 μm. Structural characterization of scanning transmission electron microscopy in cross section view reveals that the elongated α-Si3N4 crystallites are formed on the surface of the nitrided SiO2/Si (110) substrate without any interlayers between Si3N4 and Si, and the longitudinal direction of α-Si3N4 appears mainly along <112¯0>, which is approximately parallel to Si <11¯0>.

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“…By contrast, pure Ar plasma etching significantly reduced the average transmittance (55.8%) and increased the reflectance (13.38%) of the FTO film. This is likely to cause extraction of Sn after physical sputtering during the etching process, resulting in a slight yellowing of the FTO film [67]. Based on the transmittance data, the bandgap of the FTO films was calculated using the Tauc method (Eq.…”

Section: Surface Propertiesmentioning

confidence: 99%

Etching characteristics and surface properties of fluorine-doped tin oxide thin films under CF4-based plasma treatment

Lee

Joo

et al. 2022

Appl. Phys. A

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Owing to their low-cost, high-temperature processability, and excellent optoelectronic properties, fluorine-doped tin oxide (FTO) films are widely used as transparent conductive materials to replace indium-tin-oxide films. Dry etching is increasingly preferred for the patterning of FTO films considering the high-resolution patterning process required for microdevice applications. This study investigates the dry etching of FTO thin films using CF4-based plasma treatment and analyzes the changes in the etching characteristics and surface properties based on various conditions. The highest etching rate was observed under pure CF4 conditions, indicating that the chemical etching effect is the primary mechanism during the etching process. Based on the X-ray photoelectron spectroscopy and optical emission spectroscopy results, we determined that the etching of the FTO thin film was caused by the CFX radical in the CF4based plasma. Additionally, the X-ray diffraction results indicate that the plasma etching increased the crystal defects in the FTO film. The etching process smoothened the surface morphology of the FTO film, and the transmittance and bandgap energy were slightly changed as a function of the etching conditions. Additionally, the resistivity of the FTO film improved slightly. The obtained results can benefit the development of high-performance optical devices that use FTO as transparent electrodes.

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Stability study: Transparent conducting oxides in chemically reactive plasmas

Cited by 10 publications

References 30 publications

Effects of sub-picosecond direct laser interference patterning on the optoelectronic properties of fluorine-doped tin oxide thin films

Effects of sub-picosecond direct laser interference patterning on the optoelectronic properties of fluorine-doped tin oxide thin films

Formation of Aligned α-Si3N4 Microfibers by Plasma Nitridation of Si (110) Substrate Coated with SiO2

Etching characteristics and surface properties of fluorine-doped tin oxide thin films under CF4-based plasma treatment

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