Controlled oxidation of NHB-stabilized disilyne (NHB)Si � Si(NHB) (1, NHB = [ArN(CMe) 2 NAr]B, Ar = 2,6-iPr 2 C 6 H 3 ) with one equivalent of trimethylamine N-oxide (Me 3 N + �O − ) in dry n-hexane gave oxobridged bis-silepin 2 in high yields. DFT calculations disclosed that silepin 2 is only more stable by 13.4 kcal/mol than the corresponding oxo-bridged bissilylene intermediate 2′ (NHB)Si(μ-O)Si(NHB), and 2 was very likely to be formed by the insertion of the two divalent Si atoms into the pendant aryl rings in bis-silylene intermediate 2′. The two silicon atoms in bis-silepin 2 could undergo formal reductive-elimination of the aryl rings and sequential oxidativeinsertion reactions with small molecules and organic substrates. Treatment of 2 with H 2 O, S 8 , and P 4 at 60 °C yielded compounds 3−5 via reductive-elimination of the aryl rings, followed by the sequential oxidative-addition of these molecules at the two Si(II) centers. Similarly, reactions of 2 with PhSiH 3 , a diphenylalkyne, pyridines, 1,3,4,5-tetramethylimidazolin-2-ylidene (IMe 4 ), Ph 2 CO, and thiophene yielded the corresponding polycyclic bis-silanes 6−12 via reductive-elimination and oxidativeaddition of C−H, Si−H, C�C, and aromatic C�C, C−S, and C�N bonds at the two Si atoms. These novel reactions indicated the pronounced bis-silylene reactivity of bis-silepin 2, consistent with the low-energy barrier for the interconversion between 2 and 2′, as disclosed by DFT calculations.