Stabilization of formamidinium lead triiodide α-phase with isopropylammonium chloride for perovskite solar cells

Park, Byung‐wook; Kwon, Hyoung Woo; Lee, Yonghui; Lee, Do Yoon; Kim, Min; Kim, Geonhwa; Kim, Ki-Jeong; Kim, Young Ki; Im, Jino; Shin, Tae Joo; Seok, Sang Il

doi:10.1038/s41560-021-00802-z

Cited by 204 publications

(96 citation statements)

References 41 publications

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“…The incorporated Br anions could compete with I anions and coordinate more strongly with the metal ions (Sn 2+ ), modulating the nucleation and crystallisation kinetics of the perovskite lms 34,35 . In comparison, both the I/Cl and I/Br/Cl lms exhibited a considerably smoother surface morphology, suggesting the incorporation of Cl in the precursor signi cantly promoted perovskite formation, similar to observations about Cl in lead halide perovskites for solar cells 34,36,37 . The results are consistent with X-ray diffraction (XRD) analyses, where the I/Cl and I/Br/Cl samples exhibited substantially increased intensities of the main diffraction peaks compared with those of the I-pristine and I/Br samples, suggesting notably enhanced crystallinity (Fig.…”

Section: Resultssupporting

confidence: 79%

High-performance hysteresis-free perovskite transistors through anion engineering

Zhu

Liu

Shim

et al. 2021

Preprint

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Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited owing to ion migration and large organic spacer isolation. Herein, we report high-performance and hysteresis-free p-channel perovskite thin-film transistors (TFTs) based on methylammonium tin iodide (MASnI3) and rationalise the effects of halide (I/Br/Cl) anion engineering on crystallinity enhancement and vacancy suppression, realising a high hole mobility of 20 cm2 V−1 s−1, current on/off ratio exceeding 107, and threshold voltage of 0 V with high operational stability and reproducibility. We reveal ion migration has a negligible contribution to the hysteresis of Sn-based perovskite TFTs; instead, minority carrier trapping is the primary cause. Finally, we integrate the perovskite TFTs with commercialised n-channel indium gallium zinc oxide TFTs on a single chip to construct high-gain complementary inverters, facilitating the development of halide perovskite semiconductors for printable electronics and circuits.

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Section: Resultssupporting

confidence: 79%

High-performance hysteresis-free perovskite transistors through anion engineering

Zhu

Liu

Shim

et al. 2021

Preprint

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“…In addition, we found that PbI 2 solubility in the DMF/DMSO mixture (4:1 v/v) at 30 • C, 60 • C and 90 • C reaches 1.47 M, 2.90 M and 4.44 M, respectively, demonstrating a steep linear trend. This result indicates that the 1.5 M PbI 2 solutions widely used in the two-step process are oversaturated if coated below 30 • C, which is usually the case [26].…”

Section: Resultsmentioning

confidence: 93%

Solubility of Hybrid Halide Perovskites in DMF and DMSO

et al. 2021

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Solution methods remain the most popular means for the fabrication of hybrid halide perovskites. However, the solubility of hybrid perovskites has not yet been quantitively investigated. In this study, we present accurate solubility data for MAPbI3, FAPbI3, MAPbBr3 and FAPbBr3 in the two most widely used solvents, DMF and DMSO, and demonstrate huge differences in the solubility behavior depending on the solution compositions. By analyzing the donor numbers of the solvents and halide anions, we rationalize the differences in the solubility behavior of hybrid perovskites with various compositions, in order to take a step forward in the search for better processing conditions of hybrid perovskites for solar cells and optoelectronics.

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“…Subsequently, the energetically favorable δ-FAPbI 3 overpopulates α-FAPbI 3 in the films. The formation energy values of δ-FAPbI 3 and α-FAPbI 3 are −6.03 and −5.98 eV, respectively [ 15 , 16 , 17 ].…”

Section: Resultsmentioning

confidence: 99%

Investigation of Cation Exchange Behaviors of FAxMA1−xPbI3 Films Using Dynamic Spin-Coating

Jeong

Park

et al. 2021

Materials

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In this study, we fabricated and characterized uniform multi-cation perovskite FAxMA1−xPbI3 films. We used the dynamic spin-coating method to control the cation ratio of the film by gradually increasing the FA+, which replaced the MA+ in the films. When the FA+ concentration was lower than xFA ~0.415 in the films, the stability of the multi-cation perovskite improved. Above this concentration, the film exhibited δ-phase FAPbI3 in the FAxMA1−xPbI3 films. The formation of δ-phase FAPbI3 disturbed the homogeneity of the photoluminescence spatial distribution and suppressed the absorption spectral bandwidth with the increasing bandgap. The precise control of the cation ratio of multi-cation perovskite films is necessary to optimize the energy-harvesting performance.

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Stabilization of formamidinium lead triiodide α-phase with isopropylammonium chloride for perovskite solar cells

Cited by 204 publications

References 41 publications

High-performance hysteresis-free perovskite transistors through anion engineering

High-performance hysteresis-free perovskite transistors through anion engineering

Solubility of Hybrid Halide Perovskites in DMF and DMSO

Investigation of Cation Exchange Behaviors of FAxMA1−xPbI3 Films Using Dynamic Spin-Coating

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