high efficiency and stable operation of PSCs simultaneously when the bias and high temperature are involved in longterm real working condition. The low ionic migration activation energy (E a ) resulting in a low ionic activated temperature near room temperature (RT) is believed to be the origin of ion migration effect of OIHP devices under working bias. [16] Huang and co-workers [17] reported that in bulk single-crystalline CH 3 NH 3 PbI 3 (MPI), the E a was 0.624 eV under the electric field of 0.4 V µm −1 in dark and the ionic activated temperature was 276 K, while the E a further decreased to 0.338 eV under illumination. Meanwhile, the E a would further deteriorate in polycrystalline perovskite thin films to almost half of that in single crystals due to the much lower E a in amorphous or low-crystallized grain boundaries (GBs). These regions were proved as major ion migration pathways rather than in bulk. [12,18] Most critically, there is always much higher working temperature and stronger illumination in real working condition of OIHP devices, which would further boost the ion migration effect and thus accelerate the decomposition of perovskites. [19,20] Great efforts have been made from both materials and devices to mitigate the bias-induced ionic instability of perovskites. On one hand, improving the crystallinity of perovskite thin films toward single crystal is one efficient strategy to reduce ion migration pathways by suppressing the ratio of GBs [21] and high operational stability is reported in coplanar structured MAPbI 3 single crystal devices. [22] On the other hand, most efficient OIHP devices are based on polycrystalline thin film structures, thus composition engineering to enhance intrinsic stability of OIHP materials, such as introducing low-dimensional [23] or inorganic structures, [24] and interfaces engineering for defects passivation of GBs [25][26][27] are the main strategies to optimize the stability of PSCs. However, the carrier transport and ionic properties are still limited by the intrinsic bulk grain with soft lattice. [26] So it is imperative to ameliorate the intrinsic ionic stability of OIHPs under operation condition without compromising device efficiency and solution-processable advantages.Recently, it is found that strain engineering showed potential to provide another pathway to stabilize perovskite materials as well as devices by inhibiting ion migration. [28][29][30] However, it is still controversial whether the mechanical interaction between the thin interface layer and the nonepitaxial perovskite layer offsetting the residual strain. Meanwhile, the annealing-related modification process will generate additional disturbance about A highly crystalline tempered-glass-like perovskite grain structure with compressed surface lattice realized by a thermal-shocking fabrication is shown. The strained perovskite grain structure is stabilized by Cl − -reinforcing surface lattice and shows enhanced bonding energy and ionic activation temperature, which contributes to hysteresis-free ope...