2022
DOI: 10.1088/1402-4896/ac4864
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Stabilization of tetragonal phase of nanostructured Fex/ZrO2 system (0 ≤ x ≤ 25) prepared by modified sol-gel method

Abstract: In the present study, Fex/ZrO2 (0 ≤ x ≤ 25) nanoparticles were synthesized by a facile modified Sol-Gel method. Stabilization of the tetragonal phase of ZrO2 is studied as a function of both the Fe incorporation ratios and thermal treatment. The Fe incorporation ratios are tested up to the extreme just before FeO and Fe2O3 phases are formed separately. The prepared Fex/ZrO2 nanoparticles XRD analysis depicts the formation of zirconium oxide at different Fe ratios in the nanoscale with an excellent degree of cr… Show more

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Cited by 1 publication
(3 citation statements)
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“…The aim of this work is to determine the appropriate ratio for zirconia to suit different purposes. In contrast to the previous study [7], which used varied Fe doping ratios in zirconia lattices at various annealing temperatures until arrive at 800 °C which considered the best temperature for the greatest ratio, Ba is used to stabilize the tetragonal phase at higher temperatures, which represent the ideal case. The lattice parameters for pure zirconia and zirconia doped with different Ba ratios were calculated and tabulated in Table 1.…”
Section: Structural (Xrd) and Thermal (Dsc) Datamentioning
confidence: 98%
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“…The aim of this work is to determine the appropriate ratio for zirconia to suit different purposes. In contrast to the previous study [7], which used varied Fe doping ratios in zirconia lattices at various annealing temperatures until arrive at 800 °C which considered the best temperature for the greatest ratio, Ba is used to stabilize the tetragonal phase at higher temperatures, which represent the ideal case. The lattice parameters for pure zirconia and zirconia doped with different Ba ratios were calculated and tabulated in Table 1.…”
Section: Structural (Xrd) and Thermal (Dsc) Datamentioning
confidence: 98%
“…Tauc's law [20], which describes the relationship between incident photon energy and the absorption coefficient in the high absorption region of semiconductor materials, was used to calculate the optical band gap of the fabricated samples. (7) Where B is a probability constant, h is Planck's constant, and ν is the optical frequency, so that hν is the energy of the incident photon, E g is the optical band gap energy, and n is an exponent whose value depends strongly on the type of the electronic transition. Therefore, n takes 1/2 for the direct transition and 2 for the indirect transition.…”
Section: Optical Analysis (Uv-visible Spectroscopy)mentioning
confidence: 99%
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