Stabilization of the Distorted Configuration of the EL2 Defect Induced by the Free Electron Capture in GaAsP

Przybytek, J.; Baj, M.; Słupiński, T.

doi:10.12693/aphyspola.88.881

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DLTS Investigations of the Distorted Configuration of the EL2 Defect Stabilized under High Hydrostatic Pressure in GaAs_1−xP_x

Przybytek

Baj

Słupiński

et al. 1996

Physica Status Solidi (b)

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DLTS measurements of GaAsl-.P, samples with phosphorus content 2 N 0.1 to 0.35 have been performed under hydrostatic pressure. When pressure was applied to samples with z N 0.1 and 0.2, we observed the emergence of the DLTS peak at ~9 0 K. For z N 0.2 the amplitude of this peak increased by three orders of magnitude. We can unambiguously attribute this phenomenon to a spontaneous rearrangement of the EL2 defect to its distorted configuration, enabled by the free electron capture and not by illumination. For samples with z N 0.35 the same peak has been observed without pressure, i.e. in this case the distorted configuration of the defect is stable even at ambient pressure. For samples with z = 0.1 and 0.2, under pressure and below T N 80 K, illumination and/or applying a long, positive, filling pulse, caused a long-time kinetics of the DLTS signal. This process is explained as a slow redistribution of the EL2 defect between both distorted and nondistorted configurations.

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DLTS Investigations of the Distorted Configuration of the EL2 Defect Stabilized under High Hydrostatic Pressure in GaAs_1−xP_x

Przybytek

Baj

Słupiński

et al. 1996

Physica Status Solidi (b)

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Chapter 5.1 Hydrostatic Pressure and Uniaxial Stress in Investigations of the EL2 Defect in GaAs

Trautman

Baj

Baranowski

1998

Semiconductors and Semimetals

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Stabilization of the Distorted Configuration of the EL2 Defect Induced by the Free Electron Capture in GaAsP

Cited by 2 publications

References 3 publications

DLTS Investigations of the Distorted Configuration of the EL2 Defect Stabilized under High Hydrostatic Pressure in GaAs_1−xP_x

DLTS Investigations of the Distorted Configuration of the EL2 Defect Stabilized under High Hydrostatic Pressure in GaAs_1−xP_x

Chapter 5.1 Hydrostatic Pressure and Uniaxial Stress in Investigations of the EL2 Defect in GaAs

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Stabilization of the Distorted Configuration of the EL2 Defect Induced by the Free Electron Capture in GaAsP

Cited by 2 publications

References 3 publications

DLTS Investigations of the Distorted Configuration of the EL2 Defect Stabilized under High Hydrostatic Pressure in GaAs1−xPx

DLTS Investigations of the Distorted Configuration of the EL2 Defect Stabilized under High Hydrostatic Pressure in GaAs1−xPx

Chapter 5.1 Hydrostatic Pressure and Uniaxial Stress in Investigations of the EL2 Defect in GaAs

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DLTS Investigations of the Distorted Configuration of the EL2 Defect Stabilized under High Hydrostatic Pressure in GaAs_1−xP_x

DLTS Investigations of the Distorted Configuration of the EL2 Defect Stabilized under High Hydrostatic Pressure in GaAs_1−xP_x