Exploitation
of next-generation blue light-emitting diodes (LEDs)
is the foundation of the revolution in lighting and display devices.
Development of high-performance blue perovskite LEDs is still challenging.
Herein, 4-aminobenzenesulfonic acid (SA) is introduced to passivate
blue CsPbBr3 nanoplates (NPLs), reducing the ionic migration
via a more stable Pb2+–SO3
–– formation, and the trap state density of films shows a 50%
reduction. The inevitable Br– vacancy defects after
the multistep washing process can be suppressed by a suitable MABr
treatment, which can boost the external quantum efficiency (EQE) performance.
It should be noted that the coverage of NPL films is another key factor
to realize reproducible pure blue electroluminescence (EL). Therefore,
we proposed an alternate droplet/spin coating method to improve the
coverage and thickness of NPL layer to prevent hole transport layer
emission and increase the reproducibility of LED performance and spectra.
Furthermore, we designed hole transport layers to decrease the hole
transport barrier and improve the energy-level alignment. According
to SA passivation, MABr treatment, alternate droplet/spin coating
method, and device structure optimization, a CsPbBr3 NPL-based
pure blue (0.138, 0.046) LED with 3.18% maximum EQE can be achieved,
and the half-lifetime of EL can be enhanced 1.71 times as compared
to that of the counterpart LED without SA. Both performance and stability
of pure blue NPL LEDs can be greatly improved via ligand passivation,
alternate droplet/spin coating method, and device structure optimization,
which is a trend to promote the development of pure blue perovskite
LEDs in future.