Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction

Patil, Harshada; Kim, Honggyun; Rehman, Shania; Kadam, Kalyani D.; Aziz, Jamal; Khan, Muhammad Farooq; Kim, Deok‐kee

doi:10.3390/nano11020359

Cited by 37 publications

(11 citation statements)

References 40 publications

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“…The existence of ZnO can also lead to the generation of some oxygen vacancies, which is also beneficial for the formation of conductive filaments. However, the conductive filaments in our device are more likely to be Ag filaments [10,25,45,46]. When the voltage polarity is reversed, the Ag conductive filament will break at the weakest point and the device will return to the high resistance state (HRS).…”

Section: Resultsmentioning

confidence: 99%

Stable Resistive Switching in ZnO/PVA:MoS2 Bilayer Memristor

et al. 2022

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Reliability of nonvolatile resistive switching devices is the key point for practical applications of next-generation nonvolatile memories. Nowadays, nanostructured organic/inorganic heterojunction composites have gained wide attention due to their application potential in terms of large scalability and low-cost fabrication technique. In this study, the interaction between polyvinyl alcohol (PVA) and two-dimensional material molybdenum disulfide (MoS2) with different mixing ratios was investigated. The result confirms that the optimal ratio of PVA:MoS2 is 4:1, which presents an excellent resistive switching behavior. Moreover, we propose a resistive switching model of Ag/ZnO/PVA:MoS2/ITO bilayer structure, which inserts the ZnO as the protective layer between the electrode and the composite film. Compared with the device without ZnO layer structure, the resistive switching performance of Ag/ZnO/PVA:MoS2/ITO was improved greatly. Furthermore, a large resistive memory window up to 104 was observed in the Ag/ZnO/PVA:MoS2/ITO device, which enhanced at least three orders of magnitude more than the Ag/PVA:MoS2/ITO device. The proposed nanostructured Ag/ZnO/PVA:MoS2/ITO device has shown great application potential for the nonvolatile multilevel data storage memory.

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Section: Resultsmentioning

confidence: 99%

Stable Resistive Switching in ZnO/PVA:MoS2 Bilayer Memristor

et al. 2022

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“…Particularly, the multicomponent organic molecules consisting of small molecule and polymer has been used as the active layer of high-performance ORSM, whose crystallization and phase separation can be restrain . Polyvinyl alcohol, polyvinylpyrrolidone, poly(9-vinylcarbazole), poly (methyl methacrylate), poly (3,4-ethylenedioxythiophene)/polystyrene sulfonate, polystyrene, and poly(3-hexylthiophene) (P3HT) have been adopted as the polymer component.…”

Section: Introductionmentioning

confidence: 99%

High On/Off Ratio Organic Resistive Switching Memory Based on Carbazolyl Dicyanobenzene and a Polymer Composite

Zhu

Sun

et al. 2022

J. Phys. Chem. C

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We reported a high on/off ratio organic resistive switching memory (ORSM) based on carbazolyl dicyanobenzene and the poly(3-hexylthiophene) (P3HT) composite. Two carbazolyl dicyanobenzene molecules, which were 2,4,5,6-tetrakis(carbazol-9-yl)-1,3-dicyanobenzene (4CzIPN) and 4,5-bis(carbazol-9-yl)-1,2-dicyanobenzene (2CzPN), were selected due to their low mobility and enormous steric hindrance. The ORSM exhibited non-volatile and bipolar memory properties with the on/off ratio of exceeding 105, retention time of more than 5 × 104 s, enduring ability of 150 times, “SET” voltage (V set) of −6 V, and “RESET” voltage (V reset) of 3.3 V. The large steric hindrance of 4CzIPN and 2CzPN led to a strong barrier between P3HT and 4CzIPN or 2CzPN, by which the intermolecular interaction was prohibited and the current leakage was sufficiently suppressed, leading to the enhanced on/off ratio. The mechanism of the switching was the filling and vacant process of the charge traps induced by 4CzIPN and 2CzPN, as well as the inherent traps in P3HT bulk. The negative or positive bias triggered the trapping and detrapping process, which led to the transforming of the conductive way of charges, resulting in the resistive switching effect. The study enlightens a new strategy to enhance the performance of the ORSM and facilitates their electronic application in the future.

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“…Nickel-based materials, particularly nickel oxides, have been widely investigated as a resistive switching material for high-density memory applications. − The resistive switching devices are considered as artificial synapses upon the application of low-power electrical stimuli . Reports have been published on boron nitride, cobalt phosphate, copper oxide, zinc oxide, tantalum oxide, and titanium dioxide nanotube-based devices for high-density memory and/or neuromorphic computing applications. − The nickel-based sulfide materials have wide applications in dye-sensitized solar cells, supercapacitors, rechargeable batteries, electrochemical sensors, oxygen evolution reactions, and photocatalysis. − However, the neuromorphic performance study of nickel sulfide-based materials is still unexplored. For this reason, we have considered nickel sulfide nanomaterials for neuromorphic computing applications by fabricating a metal–insulator–metal type of device.…”

Section: Introductionmentioning

confidence: 99%

Ultrafine Nickel Sulfide-Based Bipolar Resistive Switching Device as Artificial Synapses for Neuromorphic Application

Perla

Ghosh

Mallick

2022

ACS Appl. Electron. Mater.

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Biologically inspired systems, particularly those that mimic the nervous system of living beings, are becoming more demanded due to their ability to solve illposed problems such as pattern recognition or communication with the external environment. Memristors are essential components to replicate high-density networks of biological synapses that control the effectiveness of communication among neurons and implement learning capability because of their tunable conductance. In this study, an organic−inorganic hybrid system of hexamethylenediamine-stabilized ultrafine nickel sulfide particles was synthesized by employing a complexation-mediated route.Here, we propose a nickel sulfide-based memristor as an artificial synapse for neuromorphic application. The current−voltage behavior of the device exhibited bipolar resistive switching with a stable ON and OFF state with an ON/OFF ratio value of 2.5 × 10 1 . The high-conductance state of the device showed the Ohmic conduction mechanism, and the low-conductance state of the device exhibited the Fowler−Nordheim tunneling mechanism. Using identical and nonidentical pulses, the synaptic plasticity behavior of the device was investigated, which revealed the inverse-symmetric and mirror-symmetric patterns, respectively. The device mimicked the spiketime-dependent plasticity properties for Hebbian learning with a conductance value change from −86 to 91%. We also designed the spiking neural network, consisting of 18 synapses and 11 integrated firing neurons, based on the winner-take-all strategy for unsupervised feature learning.

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Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction

Cited by 37 publications

References 40 publications

Stable Resistive Switching in ZnO/PVA:MoS2 Bilayer Memristor

Stable Resistive Switching in ZnO/PVA:MoS2 Bilayer Memristor

High On/Off Ratio Organic Resistive Switching Memory Based on Carbazolyl Dicyanobenzene and a Polymer Composite

Ultrafine Nickel Sulfide-Based Bipolar Resistive Switching Device as Artificial Synapses for Neuromorphic Application

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