2004
DOI: 10.1002/crat.200310254
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Stable and transient color centers in Gd3Ga5O12 crystals

Abstract: The work is devoted to investigation of stable color centers (CC) that are created in Gd 3 Ga 5 O 12 (GGG) crystals under irradiation with γ-quanta (E=1.25 MeV, D= 10 5 Gy ) as well as transient CC created in the crystals under irradiation with pulsed electron beam (E=0.25 MeV, pulse duration 10 ns, fluence 10 12 cm -2 , time interval of registration 0-500 ns). On the basis of the performed study of optical absorption spectra of the as-grown and irradiated crystals it was established the correlation between a … Show more

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Cited by 29 publications
(21 citation statements)
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“…The induced absorption is observed in the same where it appears in GGG after γ-irradiation that allows to attribute it to ionization recharging of growth defects and impurities present in the crystal namely to formation of F-centres (absorption in the region of 24000-21000 cm −1 ) and O − -centres (30000-27000 cm −1 ) [6]. A concentration of the irradiation induced displacement defects, produced in crystal volume under ion bombardment with the ion fluence 1 × 10 9 cm −2 , is very low in comparison with concentration of genetic defects, and they cannot influence the crystal absorption.…”
Section: Resultsmentioning
confidence: 71%
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“…The induced absorption is observed in the same where it appears in GGG after γ-irradiation that allows to attribute it to ionization recharging of growth defects and impurities present in the crystal namely to formation of F-centres (absorption in the region of 24000-21000 cm −1 ) and O − -centres (30000-27000 cm −1 ) [6]. A concentration of the irradiation induced displacement defects, produced in crystal volume under ion bombardment with the ion fluence 1 × 10 9 cm −2 , is very low in comparison with concentration of genetic defects, and they cannot influence the crystal absorption.…”
Section: Resultsmentioning
confidence: 71%
“…1. This spectrum shows the narrow, high intensity lines and weak pronounced broad bands at ≈ 29000 cm −1 , and ≈ 23000 cm [6,8]. Low fluency (10 9 cm −2 ) irradiation of the GGG crystals with 235 U ions leads to the formation of slight coloration in UV-IR region with less or more appearing absorption maxima in 20000-25000 cm −1 and 26000-28000 cm −1 regions (Fig.…”
Section: Resultsmentioning
confidence: 86%
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“…It can be noted that the fluorescence intensity is not influenced by the gamma radiation with 50 Mrad, and it only shows a slight decrease after the gamma radiation of 100 Mrad, which suggests that the Yb,Er:GSGG crystal can resist strong gamma radiation. Matkovski et al [19,20] proposed that the radiation-stimulated changes of the garnet crystal properties were associated with two main processes: ionizing recharging of growth defects and formation of radiation defects through the impact mechanism, through which the formed color-center can absorb pumping light as well as reabsorb laser radiation, even though trifling color-center absorption in assumed laser region will generate a disastrous influence on the laser performance of crystal [4]. Therefore, a tiny color-center absorption may be considered to lead to the slight decrease in the fluorescence intensity of Yb,Er:GSGG crystal after the 100 Mrad gamma radiation.…”
Section: Resultsmentioning
confidence: 98%