Stable and uniform arrays of self-assembled nanocrystalline islands

Chiu, Cheng-hsin

doi:10.1103/physrevb.69.165413

Cited by 43 publications

(37 citation statements)

References 20 publications

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“…While the physical mechanisms responsible for dewetting and agglomeration of the islands are the subject of a debate, 3 there is little doubt that the long-range film-substrate interactions ͑which are also called wetting interactions͒ provide a major driving force for dewetting in the ultrathin, single crystal semiconductor-oninsulator thin films. 4,5 It must be noted that in contrast to liquids, the surface energy of solid surfaces is strongly anisotropic, leading to missing orientations in the dynamic or equilibrium surface shape [6][7][8][9][10] and faceting instability. [11][12][13][14][15][16][17][18] Anisotropy is certain to affect the dynamics of the pinhole.…”

Section: Recent Experimentsmentioning

confidence: 99%

Morphologies and kinetics of a dewetting ultrathin solid film

Khenner

2008

Phys. Rev. B

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The surface evolution model based on a geometric partial differential equation is used to numerically study the kinetics of dewetting and the dynamic morphologies for the localized pinhole defect in the surface of an ultrathin solid film with the strongly anisotropic surface energy. Depending on the parameters such as the initial depth and width of the pinhole, the strength of the attractive substrate potential and the strength of the surface-energy anisotropy, the pinhole may either extend to the substrate and thus rupture the film, or evolve to the quasiequilibrium shape while the rest of the film surface undergoes a phase separation into a hill-and-valley structure followed by coarsening. Emergence of the quasiequilibrium shape and the termination of a dewetting are associated with the faceting of the pinhole tip. Overhanging ͑nongraph͒ morphologies are possible for deep, narrow ͑slitlike͒ pinholes.

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Section: Recent Experimentsmentioning

confidence: 99%

Morphologies and kinetics of a dewetting ultrathin solid film

Khenner

2008

Phys. Rev. B

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“…Recent efforts mostly focus on numerical simulation of nonlinear surface evolution, such as the dynamics of film breaking up into islands and coarsening of islands. Based on variational formulation, both two and threedimensional Galerkin finite element methods for studying the surface diffusion and displacement field have been successfully used to predict the formation of quantum dot arrays in a strained epitaxial thin film system [16][17][18][19]. An alternative promising simulation method is phase field modeling.…”

Section: Introductionmentioning

confidence: 99%

Three-dimensional phase field simulation for surface roughening of heteroepitaxial films with elastic anisotropy

Soh

2005

Journal of Crystal Growth

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“…Further studies would be required to understand atomic processes of nucleation and growth behaviors of various adsorbates on Ru(0 0 0 1), which could alter chemical activation and affect the self-organization progress. Although a lot of attentions were paid to the formation of thin oxide film on Ru(0 0 0 1) surface [2,[7][8][9][10][11][12] and adsorptions of organic molecules on Ru(0 0 0 1) [13,14] due to their important applications in industry, there have been only a few investigations on adsorption of elemental atoms on Ru(0 0 0 1) [15][16][17][18][19][20][21][22][23]. Such systems, however, involve fundamental issues, such as growth mechanism, novel surface electronic structures, and formation of surface alloy/compound.…”

Section: Introductionmentioning

confidence: 99%