Stable chemical enhancement of passivating nanolayer structures grown by atomic layer deposition on silicon

Abstract

Production of a temporally stable chemically enhanced ultra-thin HfO2 interlayer with excellent passivation for use in photovoltaic passivating contacts.

Optimizing charge transport and band-offset in silicon heterojunction solar cells: impact of TiO2 contact deposition temperature

“…The selective contact can be categorized as n-type or p-type based on the charge carrier selectivity, like electrons or holes. Various p-type materials like PEDOT: PSS, vanadium oxide (V 2 O x ), nickel oxide (NiO x ), molybdenum oxide (MoO x ), etc are used as p-type selective contacts in SHSCs [7][8][9][10], whereas metal oxides like zinc oxide (ZnO), titanium oxide (TiO 2 ), hafnium oxide (HfO x ), etc, and doped metal oxides are widely used as n-type selective contacts [11][12][13]. Among them, TiO 2 is an interesting carrier selective contact for SHSCs due to its suitable band offset and work function alignment to silicon [6,14,15].…”

“…Thus, the above investigations propose TiO 2 as a prominent carrier selective contact for SHSCs. Furthermore, deposition temperature also plays a crucial role in deciding the charge transport aspects of carrier selective contacts [11]. Suitable deposition temperature may improve the surface growth and optoelectronic properties of TiO 2 layers.…”