Stable electroluminescence from reverse biased <i>n</i>-type porous silicon–aluminum Schottky junction device

Lazarouk, S. K.; Jaguiro, P.; Katsouba, S; Masini, G.; Monica, S. La; Maiello, G.; Ferrari, Aldo

doi:10.1063/1.115892

Cited by 56 publications

(26 citation statements)

References 3 publications

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“…In this picture every needle could behave as a single diode connected to the aluminum top layer. Preliminary results concerning many parallel diodes with a gaussian distribution of dimensions arc encouraging [8], Measured electroluminescence spectra confirm [4] the different origin of the EL and PL phenomena: while PL spectrum shows typical emission of porous silicon, EL is broader and shows red shift of peak position with respect to PL. The resulting light covers the entire visible range and appears yellowish-white to the eye.…”

Section: Discussionmentioning

confidence: 89%

Visible light from aluminum-porous silicon Schottky junctions

Lazarouk¹,

Jaguiro²,

Katsouba³

et al. 1996

Thin Solid Films

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The fabrication technologies and the properties of light-emitting devices based on A 1-porous silicon (PS) Schottky junctions have been developed. Bright light emission, visible by the naked eye at normal daylight, is observed at the edge of the electrodes under reverse bias.The electroluminescence (EL) starting voltage is in the range 5-18 V, depending on the doping level of Si substrate. The current level at which the EL starts is around 1 mA for devices of 2.3 X 10 " 3 cm 2 area. The lighi emission intensity increases with increasing current density. EL spectra were broad, covering the whole visible range.The time stability was excellent for all tested devices; the EL intensity did not show remarkable changes, even after more than ten days of continuous light emission at voltages lower than thermal breakdown.

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Section: Discussionmentioning

confidence: 89%

Visible light from aluminum-porous silicon Schottky junctions

Lazarouk¹,

Jaguiro²,

Katsouba³

et al. 1996

Thin Solid Films

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“…Since then, Schottky diode-based LEDs have been reported for various materials under either forward or reverse biases, including ZnSe [395,396], porous Si [397], GaN [398], as well as ZnO nanowires and nanotubes [399][400][401].…”

Section: Schottky Diode-based Ledsmentioning

confidence: 99%

One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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One-dimensional (1D) ZnO nanostructures have been studied intensively and extensively over the last decade not only for their remarkable chemical and physical properties, but also for their current and future diverse technological applications. This article gives a comprehensive overview of the progress that has been made within the context of 1D ZnO nanostructures synthesized via wet chemical methods. We will cover the synthetic methodologies and corresponding growth mechanisms, different structures, doping and alloying, positioncontrolled growth on substrates, and finally, their functional properties as catalysts, hydrophobic surfaces, sensors, and in nanoelectronic, optical, optoelectronic, and energy harvesting devices.

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“…These can be manufactured through a standard Al metallization process which includes deposition of Al (or Al-Nb bilayer), photolithography masking, anodizing Al through photoresist mask (or plasma etching Nb through the mask, and anodizing Al) [10]. After 1000 h of continuous operation no symptoms of degradation were found in the tested LEDs [5]. Probably, the lifetime is the same as it is for common semiconductor devices, especially if Al-Si alloy is used except Al to prevent Si dissolution in cover electrode.…”

Section: Electrophysical Properties Of Si Based Ledsmentioning

confidence: 99%

“…During that time silicon technology has significantly improved and correspondently the quantum efficiency of silicon LEDs was raised from 10 6 to several percents [2][3][4]. One of the milestones on this way was the evidence of visible light emission from avalanche porous silicon (PS) reverse biased diodes [5]. At present time PS avalanche LEDs have long operation lifetime, low operation voltages (< 12 V), extremely sharp VA-curve, nanosecond response time and high operation current densities (up to 3000 A/cm 2 in pulse mode).…”

Section: Introductionmentioning

confidence: 99%

Porous Silicon Avalanche LEDs and their Applications in Optoelectronics and Information Displays

et al. 2007

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The use of silicon based light emitting diodes may completely solve the problem of low compatibility of optoelectronics elements and silicon chip. At present time the most suitable kinds of Si-LEDs are monocrystal and porous silicon avalanche LEDs. They have advantages such as long operation lifetime (> 10000 hours), continuous spectrum, which allows to filter RGB colors, operation voltages (< 12 V), extremely sharp voltage-current characteristic, nanosecond response time, and high high operation current densities (up to 8000 A/cm 2 in pulse mode). Rather low energy efficiency (< 1%) is not so significant for near to eyes (NTE) microdisplays. These advantages open a way to design a high performance and cost effective passive addressed microdisplays.

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Stable electroluminescence from reverse biased n-type porous silicon–aluminum Schottky junction device

Abstract: Electroluminescence and photovoltaic effects of anodically fabricated metal/porous Si/Si sandwich structures based on ntype ultravioletporous Si

Cited by 56 publications

References 3 publications

Visible light from aluminum-porous silicon Schottky junctions

Visible light from aluminum-porous silicon Schottky junctions

One-dimensional ZnO nanostructures: Solution growth and functional properties

Porous Silicon Avalanche LEDs and their Applications in Optoelectronics and Information Displays

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