Stable Field Emission from Vertically Oriented SiC Nanoarrays

Abstract

Silicon carbide (SiC) nanostructure is a type of promising field emitter due to high breakdown field strength, high thermal conductivity, low electron affinity, and high electron mobility. However, the fabrication of the SiC nanotips array is difficult due to its chemical inertness. Here we report a simple, industry-familiar reactive ion etching to fabricate well-aligned, vertically orientated SiC nanoarrays on 4H-SiC wafers. The as-synthesized nanoarrays had tapered base angles >60°, and were vertically oriented with a high packing density >107 mm−2 and high-aspect ratios of approximately 35. As a result of its high geometry uniformity—5% length variation and 10% diameter variation, the field emitter array showed typical turn-on fields of 4.3 V μm−1 and a high field-enhancement factor of ~1260. The 8 h current emission stability displayed a mean current fluctuation of 1.9 ± 1%, revealing excellent current emission stability. The as-synthesized emitters demonstrate competitive emission performance that highlights their potential in a variety of vacuum electronics applications. This study provides a new route to realizing scalable field electron emitter production.

A novel environmental nano-catalyst of zeolite amended with carbon nanotube/silver nanoparticles decorated carbon paste electrode for electro-oxidation of propylene glycol

“…Thus, the structural advantages of nanomaterial as being near ideal candidates to be significant catalyst with low electron affinity, high electron mobility, and outstanding chemical and physical stability and highly conductive. It can be applicable in nanoscale molecular electronics, sensing and actuating devices, or as reinforcing additive fibers in functional composite materials 39 . Generally, constructing nanostructured cartalysts play a substantial role in exploiting promising supercapacitors with satisfactory electrochemical performance 40 .…”

Enhanced field emission stability of vertically aligned carbon nanotubes through anchoring for X-ray imaging applications

“…To select appropriate cold cathode electron sources, various materials containing SiC, [12][13][14] carbon nanotubes (CNTs), [15][16][17][18][19][20][21] LaB 6 , 22 graphene, [23][24][25] WO 3 , 26 Si tips, 27 and ZnO 28,29 have been developed as field emitters. Particularly, CNTs exhibit excellent performance, such as a high aspect ratio, superior conductivity, good chemical stability, good toughness, and high mechanical strength.…”

Fabrication of Homogeneous Nanoporous Structure on 4H‐/6H‐SiC Wafer Surface via Efficient and Eco‐Friendly Electrolytic Plasma‐Assisted Chemical Etching

“…Xiao et al. [ 16 ] performed reactive ion etching (RIE) of 4H‐SiC to fabricate well‐aligned and vertically‐orientated nanotip arrays on a 4H‐SiC wafer, at an RIE rate of 10–75 nm min −1 , which shows potential for scalable production of a field electron emitter. However, aggressive chemicals such as gaseous precursors, SF6 is required that pose a threat to human health and the environment.…”

“…However, the use of laser possibly results in material modification, and the LIPSS nanostructure layer is usually thin and non-uniform Dry etching is a well-established semiconductor processing technique. Xiao et al [16] performed reactive ion etching (RIE) of 4H-SiC to fabricate well-aligned and verticallyorientated nanotip arrays on a 4H-SiC wafer, at an RIE rate of 10-75 nm min −1 , which shows potential for scalable production of a field electron emitter. However, aggressive chemicals such as gaseous precursors, SF6 is required that pose a threat to human health and the environment.…”