2014
DOI: 10.1016/j.apsusc.2014.07.127
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Stable functionalization of germanium surface and its application in biomolecules immobilization

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Cited by 15 publications
(17 citation statements)
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“…Finally, moderate elevated temperature (higher than 60 • C, 80 • C particularly) could significantly improve the quality of NDM SAMs, the corresponding stability was even more than 10 days in water condition, much longer than the data reported [21,30]. Therefore, considering the simplicity of operation, moderate reaction conditions and high quality of the formed alkanethiol SAMs on Ge surface, the optimized thiols functionalization approach in this study might be a proper passivation choice in the future practical application of Ge [9,12,28,48].…”
Section: Discussionmentioning
confidence: 58%
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“…Finally, moderate elevated temperature (higher than 60 • C, 80 • C particularly) could significantly improve the quality of NDM SAMs, the corresponding stability was even more than 10 days in water condition, much longer than the data reported [21,30]. Therefore, considering the simplicity of operation, moderate reaction conditions and high quality of the formed alkanethiol SAMs on Ge surface, the optimized thiols functionalization approach in this study might be a proper passivation choice in the future practical application of Ge [9,12,28,48].…”
Section: Discussionmentioning
confidence: 58%
“…In this context, passivation with thiols SAMs is promising due to the advantage of incorporating a Ge-S bond at the interface. In addition, apart from passivation, thiols SAMs on Ge has the potential to introduce different chemical functional groups, which are essential for the integration of electrical and biochemical applications [27,28]. These potential applications further make thiols a promising functionalization approach.…”
Section: Introductionmentioning
confidence: 98%
“…In general, thin‐native oxide layer can be formed on Ge even with a little presence of oxygen during its deposition and also exposure of ambient atmosphere mentioned earlier . Several passivation and surface modification techniques like chlorination, fluorination, alkylation, sulfidation, deposition of HfO 2 , Langmuir–Blodgett layer, and so on are employed to prevent, control, or remove oxides from Ge surfaces . Bodlaki et al have reported the chemically removal of the oxide layer on Ge (111) surface and subsequently replacement of it by implementing monolayer of H, Cl, alkyl, and S. Further, they have showed that better passivation is achieved with alkyl‐terminated and S‐terminated surfaces.…”
Section: Introductionmentioning
confidence: 99%
“…Wolter et al have discussed the surface passivation of porous Ge film by chlorination method. In a recent report by Cai et al , it has been illustrated the removal of surface oxide of Ge by Cl termination and further protected by functionalization of the surface immersing into mercaptoundecanoic acid and isopropyl alcohol solution. Grossi et al have reported oxide layers in Ge nanowires that can be effectively removed by HCl, hydrogen fluoride, and pure H 2 O treatments.…”
Section: Introductionmentioning
confidence: 99%
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