“…In general, thin‐native oxide layer can be formed on Ge even with a little presence of oxygen during its deposition and also exposure of ambient atmosphere mentioned earlier . Several passivation and surface modification techniques like chlorination, fluorination, alkylation, sulfidation, deposition of HfO 2 , Langmuir–Blodgett layer, and so on are employed to prevent, control, or remove oxides from Ge surfaces . Bodlaki et al have reported the chemically removal of the oxide layer on Ge (111) surface and subsequently replacement of it by implementing monolayer of H, Cl, alkyl, and S. Further, they have showed that better passivation is achieved with alkyl‐terminated and S‐terminated surfaces.…”