Stable, high deposition rate, wide gap silicon for the rather thick top cells in thin film silicon multibandgap solar cells

Franken, R.H.; Li, H.; Stolk, R.L.; Werf, Karine van der; Rath, J.K.; Schropp, R.E.I.

doi:10.1109/wcpec.2006.279753

Cited by 3 publications

(6 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Deposition of device quality hydrogenated nano-crystalline silicon (nc-Si:H) as an absorber layer in solar cells takes rather long (>30 min). With hydrogenated amorphous silicon (a-Si:H) it is possible to reach deposition rates for de-vice quality material that allow the absorber layer to be deposited within 5 minutes, especially if HWCVD [2] is used rather than radio-frequent (RF) PECVD.…”

mentioning

confidence: 99%

Amorphous silicon solar cells on nano‐imprinted commodity paper without sacrificing efficiency

Werf

Budel

Dörenkämper

et al. 2015

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

Paper is a cheap substrate which is in principle compatible with the process temperature applied in the plasma enhanced chemical vapour deposition (PECVD) and hot wire CVD (HWCVD) of thin film silicon solar cells. The main drawback of paper for this application is the porosity due to its fibre like structure. The feature size (micrometre scale) is larger than the thickness of the applied photovoltaic layers. To overcome this problem, UV curable lacquer was used to planarize the surface. Plain 80 grams printer paper was taken as a substrate and the lacquer smoothens the rough surface of the paper such that a designed nanostructure can be imprinted for light scattering. In this manner single junction amorphous silicon solar cells with a HWCVD deposited intrinsic layer were processed on paper, without any concessions to the process temperature of 200 °C. The cell performance is comparable to that of reference cells grown on stainless steel, proving that solar cells can be deposited on paper substrates without sacrificing performance. PV on paper could be applied as ”disposable” power source for gadgets, electronic labelling, remote sensing systems, etc. (Internet of Things). (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

show abstract

mentioning

confidence: 99%

Amorphous silicon solar cells on nano‐imprinted commodity paper without sacrificing efficiency

Werf

Budel

Dörenkämper

et al. 2015

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

show abstract

“…Proto-Si:H was deposited from undiluted SiH 4 , whereas H 2 - [3,9]. Two types of substrates were used: a Ag/ZnO TBR made on stainless steel (SS) foil in our laboratory [10,11] and a SS/Ag/ ZnO substrate provided to us by United Solar Ovonic LLC Corporation. Indium-tin-oxide served as an anti-reflecting TCO top window; an evaporated gold grid on top facilitated a proper charge carrier collection.…”

Section: Methodsmentioning

confidence: 99%

“…Indium-tin-oxide served as an anti-reflecting TCO top window; an evaporated gold grid on top facilitated a proper charge carrier collection. Both the metal oxide layers and the textured Ag of the TBR were deposited by magnetron sputtering in our SALSA system [10,11]. The active area of the solar cells was 0.13 cm 2 .…”

Section: Methodsmentioning

confidence: 99%

“…2 shows the spectral response (SR) curves of two single junction μc-Si:H cells, both with 2.0 μm thick HWCVD absorber layers. The dashed curve was obtained for a cell on plain SS, with an i-layer grown with a constant hydrogen dilution of 0.952; the solid curve represents an optimized cell on a TBR deposited in our lab [10,11]. For this cell, the n-layer was optimized, the i-layer deposition was started somewhat below the equilibrium substrate temperature of 250°C ('dynamic start') and the hydrogen dilution was 'reversely' profiled by changing the silane flow by 10% halfway the i-layer deposition: the bottom half was grown at a hydrogen dilution of 0.948, the upper half at a higher dilution of 0.952.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Improvement of the efficiency of triple junction n–i–p solar cells with hot-wire CVD proto- and microcrystalline silicon absorber layers

Stolk

Franken

et al. 2008

Thin Solid Films

View full text Add to dashboard Cite

Hot-wire chemical vapour deposition (HWCVD) was applied for the deposition of intrinsic protocrystalline (proto-Si:H) and microcrystalline silicon (μc-Si:H) absorber layers in thin film solar cells. For a single junction μc-Si:H n-i-p cell on a Ag/ZnO textured back reflector (TBR) with a 2.0 μm i-layer, an 8.5% efficiency was obtained, which showed to be stable after 750 h of light-soaking. The short-circuit current density (J sc ) of this cell was 23.4 mA/cm 2 , with a high open-circuit voltage (V oc ) and fill factor (FF) of 0.545 V and 0.67. Triple junction n-i-p cells were deposited using proto-Si:H, plasma-deposited proto-SiGe:H and μc-Si:H as top, middle and bottom cell absorber layers. With Ag/ZnO TBR's from our lab and United Solar Ovonic LLC, respective initial efficiencies of 10.45% (2.030 V, 7.8 mA/cm 2 , 0.66) and 10.50% (2.113 V, 7.4 mA/cm 2 , 0.67) were achieved.

show abstract

“…based on the work described in [30]. Two types of substrates were used: a Ag/ZnO TBR made on stainless steel (SS) foil in our laboratory [31,32] using our in-house Ag/ZnO magnetron sputtering tool SALSA, where the texture of the Ag surface is obtained using elevated substrate temperatures, and a SS/Ag/ZnO substrate provided by United Solar Ovonic LLC Corporation, for comparison.…”

Section: Ecs Transactions 25 (8) 3-14 (2009)mentioning

confidence: 99%

Hot Wire Chemical Vapor Deposition: Recent Progress, Present State of the Art and Competitive Opportunities

Schropp

2009

ECS Trans.

View full text Add to dashboard Cite

Hot Wire CVD (also called Catalytic CVD or initiated CVD) is an elegant low pressure deposition technique for the deposition of functional films, both inorganic and organic, based on the decomposition of precursor sources at a heated metallic surface. The conformal deposition of thin films on rigid substrates or flexible foil substrates, whether in-line or batch type, is very straightforward, since it is plasma-free (i.e. without the risk of a damaging bombardment of energetic ions) and it is easily scalable. An increasing variety of thin film materials can be obtained with this method, with good feedstock gas utilization and high deposition rate. Progress has been made in establishing stable and reproducible conditions for the hot catalytic wires used for efficient decomposition of the source gases. In this paper we discuss some of the current research issues in this field.

show abstract

Stable, high deposition rate, wide gap silicon for the rather thick top cells in thin film silicon multibandgap solar cells

Cited by 3 publications

References 7 publications

Amorphous silicon solar cells on nano‐imprinted commodity paper without sacrificing efficiency

Amorphous silicon solar cells on nano‐imprinted commodity paper without sacrificing efficiency

Improvement of the efficiency of triple junction n–i–p solar cells with hot-wire CVD proto- and microcrystalline silicon absorber layers

Hot Wire Chemical Vapor Deposition: Recent Progress, Present State of the Art and Competitive Opportunities

Contact Info

Product

Resources

About