Stable hot spots and second breakdown in power transistors

Hower, P.L.; Blackburn, David L.; Oettinger, Frank F.; Rubin, S.

doi:10.1109/pesc.1976.7072923

Cited by 26 publications

(6 citation statements)

References 6 publications

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“…The purpose of this paper is to present experimental results of the RBSB behavior of high voltage, fast switcning power transistors obtained using the nondestructive reverse-bias safe operating arfta test circuit developed at the National Bureau of Standards (NHS) (6). Sarller results ha^re previously been reported [7,81. This paper reports results of measurements of the RBSB behavior of n+-P-"--r.+ power transistors an a function of the rave-se-base current, cane temperature, collector load inductance, and peak collector current.…”

Section: Task 3 •mentioning

confidence: 99%

“…Most of the measurements described have been made using the nondestructive reverse-bias safe-operating-area test system developed previously at NBS (7].…”

Section: Accomplishmentsmentioning

confidence: 99%

“…it is thought at this time that the failure of eq (1) to accurately predict the RBSB behavior during sustaining is a result of a failure of the theory of current focusing to at-:curately predict the peak current density. IL is speculated that either a mechanism similar to thermal inst..bili.ty [7) or the inability of t'ie transistor to turn off uniformly spatially d ►±3 to its emitter or base structure may cause the current density to he greater than predicted by the theory of current focusing. :'heGe ideas are using actively investigated at this time.…”

Section: Taskmentioning

confidence: 99%

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Power transistor switching characterization

Blackburn

1981

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Section: Task 3 •mentioning

confidence: 99%

“…Most of the measurements described have been made using the nondestructive reverse-bias safe-operating-area test system developed previously at NBS (7].…”

Section: Accomplishmentsmentioning

confidence: 99%

Section: Taskmentioning

confidence: 99%

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Power transistor switching characterization

Blackburn

1981

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“…where pc is the n--region resistivity. Using charge control equations, it is possible to more accurately compute the total voltage drop (Hower 1973(Hower , 1976 for devices with narrow emitter stripes.…”

Section: On-state Voltage Drop Of Bipolar Transistorsmentioning

confidence: 99%

Physics of semiconductor power devices

Blicher¹

1982

Rep. Prog. Phys.

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Semiconductor power devices are designed to rapidly switch or amplify high currents, to support high voltages, and to control electric power. Because of these requirements, their topographies and structures are different from those of small-signal devices. Specific designs are the result of the understanding of the physics of p-n junction HV breakdown, gain variation at high currents, current instabilities, etc. After introducing elementary semiconductor structures, the article reviews the basic principles of the operation of bipolar and field-effect power transistors and thyristors. This is followed by a discussion of phenomena of special interest for power devices: junction avalanche breakdown, the effect of the current level on the current gain, dynamic and static behaviour at high currents and thermal properties and instabilities. The review includes recent advances in device physics and introduces the reader to new methods of improving device performance. Power is a relative concept-at microwave frequencies a few watts is a very large quantity; this review therefore includes a section on microwave power devices.

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“…The so-called "hot spot" is a phenomenon occurring in power transistors with a cellular structure, bipolar [1,2] and also MOS [3] working in high conduction regimes. It consists of a particular situation in which, due to the interaction among geometrical, electrical and thermal factors, a small part of the device accumulates most of the total current.…”

Section: Introductionmentioning

confidence: 99%

Study of Hot-spot Phenomena in Cellular Power Transistors by Analytical Electro-Thermal Simulation

Bagnoli

Pascoli

Breglio

2002

32nd European Solid-State Device Research Conference

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The cellular power transistors are affected by the socalled hot spot phenomenon, a current crowding within few cells occurring for high power conditions, which decreases the device operating range. The onset of this phenomenon was studied under a wide range of electrical and thermal boundary conditions by means of a fast electro-thermal simulation procedure operating in the steady-state regime and using explicit analytical relationships for the temperature mapping. Furthermore, the results of experimental electrical characterizations performed on some samples were in agreement with the foreseen data.

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Stable hot spots and second breakdown in power transistors

Cited by 26 publications

References 6 publications

Power transistor switching characterization

Power transistor switching characterization

Physics of semiconductor power devices

Study of Hot-spot Phenomena in Cellular Power Transistors by Analytical Electro-Thermal Simulation

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