Stable humplike Hall effect and noncoplanar spin textures in 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow><mml:mi>SrRuO</mml:mi></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:math>
 ultrathin films

Sohn, Byungmin; Kim, Bongju; Park, Se Young; Choi, Heekyung; Moon, Joon-Ho; Choi, Taeyang; Choi, Young Jai; Zhou, Hua; Choi, Jun Woo; Bombardi, A.; Porter, D. G.; Chang, Seo Hyoung; Han, Jung Hoon; Kim, Changyoung

doi:10.1103/physrevresearch.3.023232

Cited by 17 publications

(8 citation statements)

References 59 publications

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“…No evidence for off-center oxygen displacements in the STO and SRO were found as has been recently reported in 4 uc SRO films. [16] For the 16 uc SRO film at 300 K, the in-phase rotation angle is suppressed to 3.4 o while the rotation about c-axis increases (relative to bulk) to 9.7 o . The distorted orthorhombic structure at 300 K is in contrast to the tetragonal a 0 b 0 c − structure reported for SRO films with thicknesses below 17 uc.…”

Section: Resultsmentioning

confidence: 97%

“…This is however still under debate, as other mechanisms apart of a THE contribution can explain the occurrence of humplike features in the Hall loops as well. [7,[15][16][17][18][19] Multiple factors are known to contribute to the anomalous Hall effect in SRO including stoichiometry, structure, temperature and layer thickness. [12,15,19] Hence, a detailed understanding of the atomic-scale properties of SRO is required to understand its complex electronic and magnetic properties.…”

Section: Introductionmentioning

confidence: 99%

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Thickness and temperature dependence of the atomic-scale structure of SrRuO$_3$ thin films

Zhang,

Penn,

Wysocki

et al. 2022

Preprint

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Due to the strong lattice-property relationships which exist in complex oxide epitaxial layers, their electronic and magnetic properties can be modulated by structural distortions induced at the atomic scale. The modification and control can be affected at coherent heterointerfaces by epitaxial strain imposed by the substrate or by structural modifications to accommodate the filmsubstrate symmetry mismatch. Often these act in conjunction with a strong dependence on the layer thickness, especially for ultrathin layers. Moreover, as a result of these effects, the temperature dependence of the structure may deviate largely from that of the bulk. The temperature-dependent structure of 3 to 44 unit cell thick ferromagnetic SrRuO 3 films grown on Nb-doped SrTiO 3 substrates are investigated using a combination of high-resolution synchrotron X-ray diffraction and high resolution electron microscopy. This aims to shed light on the intriguing magnetic and magnetotransport properties of epitaxial SRO layers, subjected to extensive investigations lately. The oxygen octahedral tilts and rotations are found to be strongly dependent on the temperature, the film thickness, and the distance away from the film-substrate interface. As a striking manifestation of the coupling between magnetic order and lattice structure, the Invar effect is observed below the ferromagnetic transition temperature in epitaxial layers as thin as 8 unit cells, similar to bulk ferromagnetic SrRuO 3 .

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Section: Resultsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Thickness and temperature dependence of the atomic-scale structure of SrRuO$_3$ thin films

Zhang,

Penn,

Wysocki

et al. 2022

Preprint

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“…Besides the discovery of new phenomena, SrRuO 3 films with controlled defect densities can potentially resolve long-standing debates on the origins of previously observed phenomena such as the hump-like features in their anomalous Hall curves . Some studies argue that the hump-like features arise from the topological Hall effect, − a manifestation of the enhanced Hall signal produced when the conduction electrons in SrRuO 3 interact with the skyrmion-produced magnetic field. Other studies contest this argument, suggesting that these features are associated with multiple magnetic domains that arise from inhomogeneities in film thickness, Ru deficiency, the presence of different structural domains, or the stabilization of multiple crystal polymorphs of SrRuO 3 . − Additional factors such as epitaxial strain-induced changes to the Berry phase curvature and proton intercalation into the SrRuO 3 lattice through ionic gating can produce changes in the anomalous Hall resistance and complicate this analysis.…”

Section: Introductionmentioning

confidence: 99%

Adsorption-Controlled Growth and Magnetism in Epitaxial SrRuO₃ Films

Manjeshwar,

Nair,

Rajapitamahuni

et al. 2023

ACS Nano

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Controlling defect densities in SrRuO 3 films is the cornerstone for probing the intricate relationship among its structural, electrical, and magnetic properties. We combine film growth, electrical transport, and magnetometry to demonstrate the adsorption-controlled growth of phase-pure, epitaxial, and stoichiometric SrRuO 3 films on SrTiO 3 (001) substrates using solid source metal−organic molecular beam epitaxy. Across the growth window, we show that the anomalous Hall curves arise from two distinct magnetic domains. Domains with similar anomalous Hall polarities generate the stepped feature observed within the growth window, and those with opposite polarities produce the hump-like feature present exclusively in the highly Ru-poor film. We achieve a residual resistivity ratio (RRR = ρ 300K /ρ 2K ) of 87 in a 50 nmthick, coherently strained, and stoichiometric SrRuO 3 film, the highest reported value to date on SrTiO 3 (001) substrates. We hypothesize further improvements in the RRR through strain engineering to control the tetragonal-to-orthorhombic phase transformation and the domain structure of SrRuO 3 films.

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“…SrRuO 3 (SRO), a 4d itinerant ferromagnet, is an extensively explored oxide with the nontrivial band structure, which is highly sensitive to the intrinsic Berry curvature, especially with the Fermi level near the band crossing position. − This nontrivial band structure triggers various exotic physical properties in SRO, including anomalous Hall effect (AHE), topological Hall effect (THE), and so forth. , Recently, the emergence of hump-like AHE in thin SRO films (few of nanometers) and heterostructures has garnered considerable attention as a promising signature of nontrivial spin texture as well as various potential applications in spintronics. − However, the origination of these hump-like features in AHE remains the subject of ongoing debate. − Some studies propose that these features arise from the topological Hall effect resulting from magnetic skyrmions (Berry curvature in band structure), − while the two-channel AHE (inhomogeneous magnetic domains) is suggested as the origination of hump-like AHE, , which is strongly related to thickness variation, , structural defects, and stoichiometric deviation (Ru contents). − In the two-channel AHE model, the two anomalous Hall resistances have opposite polarities, which are temperature dependent . Although hump-like features are observed in SRO films of varying thicknesses in the literature, such characteristics are typically observed in thinner films.…”

Section: Introductionmentioning

confidence: 99%

“…Although hump-like features are observed in SRO films of varying thicknesses in the literature, such characteristics are typically observed in thinner films. Such features are typically observed in thinner films (≤6 nm). − ,− The hump-like characteristics are absent in thick films unless they possess a high density of structural defects . Thus, a comprehensive investigation of AHE in SRO films is necessary to understand the origin of hump-like AHE.…”

Section: Introductionmentioning

confidence: 99%

Strain- and Oxygen-Modulated Anomalous Hall Effect in the SrRuO₃/Sr₃Al₂O₆ Heterostructure

Li,

Kang,

Liu

et al. 2023

J. Phys. Chem. C

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The hump-like anomalous Hall effect (AHE) is an intriguing phenomenon in physics and the material community, with significant potential applications for spintronics. The physical mechanism responsible for this effect is still a topic of debate. Here, the unconventional hump-like AHE is observed in the epitaxial SrRuO 3 (SRO)/Sr 3 Al 2 O 6 (SAO) heterostructure with a relatively thick SRO thickness, accompanying the sign change of anomalous Hall resistance. This hump-like AHE disappears in the freestanding SRO film after the SAO layer was dissolved in water. Additionally, the hump-like feature could be manipulated by the in-plane tensile strain and oxygen vacancies through varying the SAO thickness and in situ oxygen annealing, respectively. A two-domain model, namely, domain I and domain II for negative and positive Hall resistance, is employed to comprehensively understand the hump-like AHE observed in SRO/SAO heterostructures. The positive and negative anomalous Hall resistances are strongly bonded to the intrinsic nontrivial band structure. Microscopically, the formation of the two-domain is closely related to the modulation of Ru−O−Ru bond/length as well as the octahedral rotation. This study provides some comprehensive understanding of the origination of hump-like AHE in SRO-based films, which could facilitate the application of SRO in spintronics.

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Stable humplike Hall effect and noncoplanar spin textures in SrRuO3 ultrathin films

Cited by 17 publications

References 59 publications

Thickness and temperature dependence of the atomic-scale structure of SrRuO$_3$ thin films

Thickness and temperature dependence of the atomic-scale structure of SrRuO$_3$ thin films

Adsorption-Controlled Growth and Magnetism in Epitaxial SrRuO₃ Films

Strain- and Oxygen-Modulated Anomalous Hall Effect in the SrRuO₃/Sr₃Al₂O₆ Heterostructure

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Stable humplike Hall effect and noncoplanar spin textures in SrRuO3 ultrathin films

Cited by 17 publications

References 59 publications

Thickness and temperature dependence of the atomic-scale structure of SrRuO$_3$ thin films

Thickness and temperature dependence of the atomic-scale structure of SrRuO$_3$ thin films

Adsorption-Controlled Growth and Magnetism in Epitaxial SrRuO3 Films

Strain- and Oxygen-Modulated Anomalous Hall Effect in the SrRuO3/Sr3Al2O6 Heterostructure

Contact Info

Product

Resources

About

Adsorption-Controlled Growth and Magnetism in Epitaxial SrRuO₃ Films

Strain- and Oxygen-Modulated Anomalous Hall Effect in the SrRuO₃/Sr₃Al₂O₆ Heterostructure