Stable indium oxide thin-film transistors with fast threshold voltage recovery

Vygranenko, Yuri; Wang, Kai; Nathan, Arokia

doi:10.1063/1.2825422

Cited by 110 publications

(63 citation statements)

References 16 publications

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“…Vygranenko et al [52] and Reidl et al [53] found no state creation instability in their indium oxide TFTs. The oxide TFTs can however be sensitive to oxidation problems and always to charge trapping in the gate insulator [53][54][55][56].…”

Section: Featurementioning

confidence: 98%

Disorder and instability processes in amorphous conducting oxides

Robertson

2008

Physica Status Solidi (b)

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The behaviour of ionic amorphous oxide semiconductors (transparent conducting oxides) such as In2O3, SnO2, and ZnO is contrasted with that of covalent amorphous semiconductors such as amorphous Si. These oxides have an s‐like conduction band minima, which leads to high electron mobilities, smaller effects of disorder, and the ability to move the Fermi level well into the conduction band. This results in an absence of the bias stress instability due to the bond breaking mechanism in oxide thin film transistors, which limited the stability of a‐Si:H transistors. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Featurementioning

confidence: 98%

Disorder and instability processes in amorphous conducting oxides

Robertson

2008

Physica Status Solidi (b)

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“…Particularly, transparent TFTs based on transparent metal oxides such as ZnO [3][4][5], In 2 O 3 [6], In-Zn-O (IZO) [7,8], In-Ga-Zn-O (IGZO) [9], and Al-Zn-Sn-O (AZTO) [10] have much attracted due to their advantages over conventional semiconductors and their good transparency in the visible range, a low process temperature, good large-area uniformity, and relatively high carrier mobility [11].…”

Section: Introductionmentioning

confidence: 99%

Physical/chemical properties of tin oxide thin film transistors prepared using plasma-enhanced atomic layer deposition

Lee

Jung

Kim

et al. 2012

Materials Research Bulletin

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“…Therefore, the promise of oxide semiconductors as an enabling technology is only likely to be realised when a combination of simple processing and high performance can be achieved. Among the many metal oxide semiconductors known [10,[22][23][24][25][26] the II-VI group compound ZnO has attracted most interest because of its non-toxicity [17] and exceptionally high electron mobility. [13,27,28] In its crystalline form at room temperature, ZnO is characterised by a wide bandgap (~3.4 eV) and high optical transparency.…”

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confidence: 99%

High‐Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient Atmosphere

et al. 2009

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Research on solution processible semiconducting materials is rapidly making progress towards the goal of providing viable alternatives to silicon-based technologies for applications where lower-cost manufacturing and new product features such as mechanical flexibility and optical transparency are desired. One family of materials that has been the subject of intense research over the past twenty years is organic semiconductors.[1] Use of organic materials offers the prospect of low manufacturing cost combined with some desirable physical characteristics such as ease of processing and mechanical flexibility. Despite the impressive progress achieved in recent years a number of obstacles, especially poor air-stability, device performance that is insufficient for a variety of applications and device to device variability, have to be overcome before the advantageous manufacturability, and hence the economic benefits associated with organic semiconductors, can be fully exploited.While research in the area of organic materials and devices has been intensifying, a different class of semiconducting materials, namely metal oxide semiconductors (MOxS), has emerged as possible alternative technology.[2] Metal oxides incorporate important qualities that are currently absent from organic-based semiconductors. For instance, they generally exhibit higher carrier mobilities which are already sufficient for use in optical displays, such as current-driven organic light-emitting diode (OLED) based displays. An additional advantage of MOxS relevant to many electronic applications is the superb optical transparency resulting -2 -from their wide bandgap. The latter makes oxide semiconductors particularly interesting for use in transparent electronics [3] as well as in backplanes for the next generation of currentdriven displays. [4,5] For application in see-through electronics, in particular, transparent thin-film transistors (TFTs) with high switching speeds and low power consumption are required.[6] So far the opacity of amorphous silicon and the insufficient performance of organic semiconductors have impeded the development of such devices. In this respect, MOxS materials simultaneously fulfil the requirements for optical transparency and high charge carrier mobility. In addition, they provide excellent chemical stability combined with mechanical robustness. [7] A further advantage associated with MOxS is the diverse range of techniques that can be employed for thin-film deposition.[7] These include, sputtering, [8][9][10] pulsed-laser deposition (PLD), [11] metalorganic chemical vapour deposition (MOCVD), [12,13] as well as solution processing methods such as dip coating, [14] spin coating [15][16][17][18] and spray pyrolysis (SP). [19][20][21] Solution processing, in particular, offers a number of advantages, which are well known from the area of organic electronics, with the most important being the prospect of easy patterning on large area substrates. In most cases, however, control over the morphology of solution processed film...

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Stable indium oxide thin-film transistors with fast threshold voltage recovery

Cited by 110 publications

References 16 publications

Disorder and instability processes in amorphous conducting oxides

Disorder and instability processes in amorphous conducting oxides

Physical/chemical properties of tin oxide thin film transistors prepared using plasma-enhanced atomic layer deposition

High‐Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient Atmosphere

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