Stable, low-resistance, 1.5 to 3.5 kΩ sq−1, diamond surface conduction with a mixed metal-oxide protective film

Geis, M. W.; Varghese, Joseph O.; Hollis, M.A.; Yichen, Y.; Nemanich, R. J.; Wuorio, Charles H.; Zhang, Xi; Turner, G. W.; Warnock, Shireen; Vitale, Steven A.; Molnar, R. J.; Osadchy, T.; Zhang, B.

doi:10.1016/j.diamond.2020.107819

Cited by 18 publications

(2 citation statements)

References 29 publications

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“…4(b) and (c). Similar phenomenon was also observed on the H-diamond with an Al2O3-SiO2 mixed film [16]. Passivated by the mixed film, the surface resistance was constant at a high level when kept in N2 atmosphere, while decreased quickly and tended to be saturated in 1~3 days once exposed to air.…”

Section: Resultssupporting

confidence: 78%

“…Soon after the device was fabricated (on day 25), the maximum current density IDS was -256 mA/mm and the on-resistance Ron was as large as 47 Ω•mm. After 60 days (on day 85), when the surface current was saturated, the current density of the H-diamond MOSFET was significantly increased to -549 mA/mm and the on-resistance was reduced to 28 Ω•mm, which exhibits advanced performances than that passivated by the Al2O3-SiO2 mixed film [16]. It indicates that the direct current performances were dramatically improved with the increase of the surface conductance.…”

Section: Resultsmentioning

confidence: 99%

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1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al₂O₃/SiO₂Bi-Layer Passivation at 2 GHz

Zhou

et al. 2021

IEEE J. Electron Devices Soc.

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We have demonstrated a novel method of depositing ALD-Al2O3/PECVD-SiO2 bi-layer dielectric to passive the surface channels of the hydrogen-terminated diamond (H-diamond). After Al2O3/SiO2 passivation, the surface current increased with time and then tended to be saturated. Afterwards, it became much more stable and showed a larger current than an unpassivated counterpart. The H-diamond MOSFETs were fabricated by using this bi-layer passivation structure and an extremely low Ohmic contact resistance of 0.87 Ω•mm was obtained. The H-diamond RF MOSFET with gate length of 0.45 μm achieved a high current density of -549 mA/mm and an extrinsic fT/fmax of 15/36 GHz. By load-pull measurement, a high output power density of 1.04 W/mm was obtained at frequency of 2 GHz. The results reveal that it is a promising solution for high-stable and high-power diamond transistors by using the Al2O3/SiO2 bi-layer passivation. Index Terms-H-diamond, bi-layer passivation, output power. I. INTRODUCTIONINCE the first hydrogen-terminated diamond (H-diamond) transistor was born in 1994, the H-diamond has attracted more and more attentions to develop high performance RF transistors for its remarkable properties such as high concentration of two dimensional hole gas (2DHG), large critical breakdown electric field of 10 MV/cm, as well as high thermal conductivity of 22 W•cm -1 •K -1 [1-3]. Although some breakthroughs have been realized, the performances of the H-diamond transistors are still far from expected [4][5][6][7][8][9]. One of the most important reasons is that the large surface resistance caused by its low 2DHG mobility has limited their performances [10]. In addition, the H-diamond transistors, especially those fabricated by using a self-aligned process, always suffer from instabilities for lack of effective passivation Manuscript

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Section: Resultssupporting

confidence: 78%

Section: Resultsmentioning

confidence: 99%

1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al₂O₃/SiO₂Bi-Layer Passivation at 2 GHz

Zhou

et al. 2021

IEEE J. Electron Devices Soc.

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Recent progress on heteroepitaxial growth of single crystal diamond films

Uwihoreye,

Hu,

Cao

et al. 2024

Electron

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Diamond is an ultimate semiconductor with exceptional physical and chemical properties, such as an ultra‐wide bandgap, excellent carrier mobility, extreme thermal conductivity, and stability, making it highly desirable for various applications including power electronics, sensors, and optoelectronic devices. However, the challenge lies in growing the large‐size and high‐quality single‐crystal diamond films, which are crucial for realizing the full potential of this wonder material. Heteroepitaxial growth has emerged as a promising approach to achieve single‐crystal diamond wafers with large sizes of up to 3 inches and controlled electrical properties. This review provides an overview of the advancements in diamond heteroepitaxy using microwave plasma‐assisted chemical vapor deposition, including the mechanism of heteroepitaxial growth, selection of substrates, film optimization, chemistry of defects, and doping. Moreover, recent progress on the device applications and perspectives is also discussed.

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The effects of sub-monolayer laser etching on the chemical and electrical properties of the (100) diamond surface

Moshkani,

Geis,

Downes

et al. 2025

Applied Surface Science

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Stable, low-resistance, 1.5 to 3.5 kΩ sq−1, diamond surface conduction with a mixed metal-oxide protective film

Cited by 18 publications

References 29 publications

1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al₂O₃/SiO₂Bi-Layer Passivation at 2 GHz

1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al₂O₃/SiO₂Bi-Layer Passivation at 2 GHz

Recent progress on heteroepitaxial growth of single crystal diamond films

The effects of sub-monolayer laser etching on the chemical and electrical properties of the (100) diamond surface

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Stable, low-resistance, 1.5 to 3.5 kΩ sq−1, diamond surface conduction with a mixed metal-oxide protective film

Cited by 18 publications

References 29 publications

1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al2O3/SiO2Bi-Layer Passivation at 2 GHz

1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al2O3/SiO2Bi-Layer Passivation at 2 GHz

Recent progress on heteroepitaxial growth of single crystal diamond films

The effects of sub-monolayer laser etching on the chemical and electrical properties of the (100) diamond surface

Contact Info

Product

Resources

About

1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al₂O₃/SiO₂Bi-Layer Passivation at 2 GHz

1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al₂O₃/SiO₂Bi-Layer Passivation at 2 GHz