Stable p-Type Conduction from Sb-Decorated Head-to-Head Basal Plane Inversion Domain Boundaries in ZnO Nanowires

Yankovich, Andrew B.; Puchala, Brian; Wang, Fei; Seo, Jung‐Hun; Morgan, Dane; Wang, Xudong; Ma, Zhenqiang; Kvit, A.; Voyles, Paul M.

doi:10.1021/nl203848t

Cited by 64 publications

(59 citation statements)

References 61 publications

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“…It has been demonstrated that a high doping concentration of Cl usually comes with enhanced formation of native defects such as vacancies, which migrate to the surface of ZnO NWs and form surface defects and thus induce rough surfaces . Similar phenomenon has also been observed for ZnO NWs doped with various dopants such as Sb, and Cu . The PL measurement results are shown in Figure a, which compares the normalized PL spectra measured from Cl‐ZnO NWAs/GF and undoped ZnO NWAs/GF.…”

Section: Resultssupporting

confidence: 53%

Cl-Doped ZnO Nanowire Arrays on 3D Graphene Foam with Highly Efficient Field Emission and Photocatalytic Properties

Shao

Gao

Xin

et al. 2015

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An environmentally friendly, low-cost, and large-scale method is developed for fabrication of Cl-doped ZnO nanowire arrays (NWAs) on 3D graphene foam (Cl-ZnO NWAs/GF), and investigates its applications as a highly efficient field emitter and photocatalyst. The introduction of Cl-dopant in ZnO increases free electrons in the conduction band of ZnO and also leads to the rough surface of ZnO NWAs, which greatly improves the field emission properties of the Cl-ZnO NWAs/GF. The Cl-ZnO NWAs/GF demonstrates a low turn-on field (≈1.6 V μm(-1)), a high field enhancement factor (≈12844), and excellent field emission stability. Also, the Cl-ZnO NWAs/GF shows high photocatalytic efficiency under UV irradiation, enabling photodegradation of organic dyes such as RhB within ≈75 min, with excellent recyclability. The excellent photocatalytic performance of the Cl-ZnO NWAs/GF originates from the highly efficient charge separation efficiency at the heterointerface of Cl-ZnO and GF, as well as improved electron transport efficiency due to the doping of Cl. These results open up new possibilities of using Cl-ZnO and graphene-based hybrid nanostructures for various functional devices.

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Section: Resultssupporting

confidence: 53%

Cl-Doped ZnO Nanowire Arrays on 3D Graphene Foam with Highly Efficient Field Emission and Photocatalytic Properties

Shao

Gao

Xin

et al. 2015

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“…Other sources of p-type behavior, such as acceptors localized at stacking faults and Zn 2 D 3 precipitates, have been proposed, but seem less promising for creating efficient p-type material. Very recent work 11,12 has shown stable p-type nanowires due to Sb-decorated head-to-head basal plane inversion domain boundaries. Overall, the origin of the reported p-type conductivity remains uncertain in most cases.…”

Section: Introductionmentioning

confidence: 99%

Atomistic modeling of As diffusion in ZnO

Puchala

Morgan

2012

Phys. Rev. B

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Ab initio methods are used to predict the diffusion coefficient of As dopants in ZnO as a function of Fermi level. Contributions to As diffusion from interstitial, simple substitutional, and cluster diffusion are considered. Formation and migration energies for Zn vacancies (V Zn ), As substituting on Zn lattice sites (As Zn ), complexes of As with up to two Zn vacancies (As Zn -1V Zn and As Zn -2V Zn ), and interstitial Zn and As (Zn I,oct and As I,oct ) are calculated using GGA + U and hybrid Hartree-Fock density-functional theory calculations. As Zn is the dominant As-containing donor and As Zn -2V Zn is the dominant As-containing acceptor. At low Fermi levels, As is mostly immobile, while at high Fermi levels, As Zn -2V Zn is mobile with a migration energy of 1.6 eV.

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“…14 Yankovich et al reported that Sb-decorated head-to-head basal plane inversion domain boundaries formed in Sb-doped ZnO nanowires upon codoping with Sb and O, leading to stable p-type conductivity. 15 Further insight into the origin of p-type conductivity in Sb-doped ZnO is required.…”

mentioning

confidence: 99%

Origin of p-type conductivity of Sb-doped ZnO nanorods and the local structure around Sb ions

Liang

Chuang

et al. 2015

Applied Physics Letters

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To probe the origin of p-type conductivity in Sb-doped ZnO, a careful and detailed synchrotron radiation study was performed. The extended X-ray absorption fine structure and X-ray photoelectron spectroscopy investigations provided the evidence for the formation of the complex defects comprising substitution Sb ions at Zn sites (SbZn) and Zn vacancies within the Sb-doped ZnO lattice. Such complex defects result in the increases of Sb-O coordination number and the Sb valence and thereby lead to the p-type conductivity of Sb-doped ZnO. The back-gate field-effect-transistors based on single nanorod of Sb-doped ZnO were constructed, and the stable p-type conduction behavior was confirmed.

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Stable p-Type Conduction from Sb-Decorated Head-to-Head Basal Plane Inversion Domain Boundaries in ZnO Nanowires

Cited by 64 publications

References 61 publications

Cl-Doped ZnO Nanowire Arrays on 3D Graphene Foam with Highly Efficient Field Emission and Photocatalytic Properties

Cl-Doped ZnO Nanowire Arrays on 3D Graphene Foam with Highly Efficient Field Emission and Photocatalytic Properties

Atomistic modeling of As diffusion in ZnO

Origin of p-type conductivity of Sb-doped ZnO nanorods and the local structure around Sb ions

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