Stable p‐type ZnO films obtained by lithium–nitrogen codoping method

Abstract

By employing lithium and nitrogen codoping method, p‐type zinc oxide (ZnO) films have been prepared, and the p‐type conduction can maintain for 207 days. ZnO p–n junctions have been constructed based on the p‐type ZnO. Under the drive of continuous current, obvious emission has been observed from the p–n junctions, and the ZnO p–n junction light‐emitting devices (LEDs) can still work after placing in air ambient for 180 days. Room temperature electroluminescence spectra of the p‐ZnO:(Li,N)/n‐ZnO structured LEDs under continuous current recorded intermittently for 180 days.

p-Channel and n-Channel Thin-Film-Transistor Operation on Sprayed ZnO Nanoparticle Layers

“…One difficulty faced by ZnO application is that it is challenging to obtain p-type conductivity with this material because of the compensation by intrinsic donor defects such as oxygen vacancies and Zn interstitials [7,8]. Various approaches have been reported for achieving p-type ZnO layers, like doping with group Ia [9,10], Ib [11], and V [12][13][14][15] elements, codoping with group Ia, III, or V elements [16,17], and so on [18,19]. However, few results can achieve LED or TFT operations using the obtained p-type layers.…”

Stable p‐type conductivity in B and N co‐doped ZnO epitaxial thin film

“…However, equal percentage of donor and acceptor atoms will not render ZnO p‐conducting. There are already reports where BN and Li‐N incorporation gave p‐type conductivity in this system, however, not stable over the period of time . In the present report, we describe obtaining a stable p‐type conductivity in ZnO epitaxial thin films grown by pulsed laser deposition (PLD) through N substitution at the O site using BN for the source of N along with higher oxygen partial pressure (10 −1 Torr) to minimize the formation of native defects particularly vacancy oxygen (V O ) and Schottky type‐I native defects.…”

ZnO with p-Type Doping: Recent Approaches and Applications

“…(f) Electrical properties versus time. Reprinted with permission from ref . Copyright 2013 John Wiley and Sons.…”

“…Sun et al prepared p-ZnO (Li,N) thin films by p-MBE in an NO atmosphere and constructed a p-ZnO­(Li,N)/i-ZnO/n-ZnO p–i–n LED structure, and electroluminescence only occurs at 12 K. He et al improved the growth conditions, changed the growing atmosphere from NO to a mixture of NO and O 2 , and prepared p-ZnO (Li,N) thin films, which showed good p-type conductivity. At the same time, the p-ZnO­(Li,N)/i-ZnO/n-ZnO p–i–n LED structure also showed a typical rectification curve, as shown in Figure e.…”