Stable pH sensitivity of LaAlO3/SrTiO3 interfacial electronic gas

Dong, Yanfang; Lun-yong, Zhang; Li, Chen; Luo, Yanli; Shao, Pengfei; Lei, Jianming; Wang, Rui; Wu, Di; Chen, Dunjun; Zhang, Rong; Zheng, Yi

doi:10.1016/j.cap.2021.11.015

Cited by 4 publications

(4 citation statements)

References 21 publications

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“…Site-bonding theory [29][30][31][32][33][34] has been accepted as a model to explain the interaction between oxide material surfaces and aqueous solutions. The introduction of the surface adsorption mechanism has been explained in the previous work 28 and will not discuss here.…”

Section: Discussionmentioning

confidence: 99%

“…27 In previous work, scanning transmission electron microscopy results of LAO/STO heterostructure showed that a sharp and flat interface at the atomic scale was formatted, which provides a favorable guarantee for the formation of 2DEG. 28 The critical thickness dc above which the 2DEG can be formed is approximately 4 u.c. of the LAO layer; 1,6 we, therefore, prepared an LAO/STO heterostructure with an LAO layer of 5 u.c.…”

Section: Methodsmentioning

confidence: 99%

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Effect of Surface Damage on pH Sensitivity of LaAlO₃/SrTiO₃ Heterostructure Device

Dong,

Zhang,

et al. 2023

J. Electrochem. Soc.

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For solid ion sensors, the sensing surface state plays an important role in performance, and the processing and testing environment will affect the sensing surface. In this work, the LaTiO3/SrTiO3 heterostructure, an emerging material expected to prepare economical portable and efficient ion sensors, compared the sensing performance device with different sensing thicknesses and different preparation processes. Although these devices show good sensing performance, two noteworthy phenomena are found. The first is that the micromachining process will cause the degradation of device performance; the second is the degree of degradation related to the sensing layer's thickness. For the device with a 5 unite cells (ucs) thick LAO sensing layer which degradation rate of output current and sensitivity is as high as 91.3% and 91.4%， respectively； for the device with a 7 ucs thick LAO sensing layer which the degradation rate of output current and sensitivity is 59.8% and 34.7%, respectively. The surface characterization technique shows that the degradation of the current and sensing performance of devices is caused by surface damage caused by preparation technology.

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Section: Discussionmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Effect of Surface Damage on pH Sensitivity of LaAlO₃/SrTiO₃ Heterostructure Device

Dong,

Zhang,

et al. 2023

J. Electrochem. Soc.

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“…Dong et al fabricated a prototype pH sensor device based on the LAO/STO heterointerface 2DEG, which supported output current as a linear function of pH and exhibited high response over a wide range of pH values from 4 to 9. [160] Recently, they also compared the performance of LAO/STO heterostructure sensors under different sensing thicknesses and preparation processes. [161] It was found that surface damage is the primary cause of the decline in device current and sensing performance.…”

Section: Sensormentioning

confidence: 99%

LaAlO₃/SrTiO₃ Heterointerface: 20 Years and Beyond

Chen,

Ning,

Tang

et al. 2024

Adv Elect Materials

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This year marks the 20th anniversary of the discovery of LaAlO3/SrTiO3 (LAO/STO) oxide heterointerfaces. Since their discovery, transition metal oxide (TMO) interfaces have emerged as a fascinating and fast‐growing area of research, offering a variety of unique and exotic physical properties which has provided a strong impetus for the rapid advances and actualization of oxide electronics. This review revisits the fundamental mechanisms accounting for the two‐dimensional (2D) conducting interfaces, and how new models proposed to better account for the unique interfacial effects. Recent breakthroughs in the theoretical and experimental domains of oxide interfaces are also discussed including the detection and investigation of 2D quasiparticle. Moving beyond the well‐known LAO/STO interface, this review delves into other systems where unconventional interfacial superconductivity, interfacial magnetism, and spin polarization are dealt with in greater detail. In terms of device applications, this review proceeds with a treatment on the recent developments in domains including field effect transistors and freestanding heterostructure membranes. By emphasizing the opportunities and challenges of integrating oxide interfaces with existing technologies, the review will end off with an outlook projecting the progress and the trajectory of this research domain in the years to come.

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“…Kim et al have demonstrated that a coupling between the surface and interface in the NP-coated LAO/STO heterostructures leads to the gas-and photo-induced conductance changes at the LAO/STO interface. [406] In addition, various types of chemical sensors based on complex oxide heterostructures have been reported including pH sensors, [407] ozone sensors, [408] and ethanol sensors. [409] Chemical reactions and the linked charge transfer mechanisms have been widely used for conventional sensing applications.…”

Section: Sensing Applicationsmentioning

confidence: 99%

Polar Perturbations in Functional Oxide Heterostructures

Wang

Lee

et al. 2023

Adv Funct Materials

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Growth and characterization of metal‐oxide thin films foster successful development of oxide‐material‐integrated thin‐film devices represented by metal‐oxide‐semiconductor field‐effect transistors (MOSFET), drawing enormous technological and scientific interest for several decades. In recent years, functional oxide heterostructures have demonstrated remarkable achievements in modern technologies and provided deeper insights into condensed‐matter physics and materials science owing to their versatile tunability and selective amplification of the functionalities. One of the most critical aspects of their physical properties is the polar perturbation stemming from the ionic framework of an oxide. By engineering and exploiting the structural, electrical, magnetic, and optical characteristics through various routes, numerous perceptive studies have clearly shown how polar perturbations advance functionalities or drive exotic physical phenomena in complex oxide heterostructures. In this review, both intrinsic (engraved by thin‐film heteroepitaxy) and extrinsic (reversibly controllable defect‐mediated disorder and polar adsorbates) elements of polar perturbations, highlighting their abilities for the development of highly tunable functional properties are summarized. Scientifically, the recent approaches of polar perturbations render one to consolidate a prospect of atomic‐level manipulation of polar order in epitaxial oxide thin films. Technologically, this review also offers useful guidelines for rational design to heterogeneously integrated oxide‐based multi‐functional devices with high performances.

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Stable pH sensitivity of LaAlO3/SrTiO3 interfacial electronic gas

Cited by 4 publications

References 21 publications

Effect of Surface Damage on pH Sensitivity of LaAlO₃/SrTiO₃ Heterostructure Device

Effect of Surface Damage on pH Sensitivity of LaAlO₃/SrTiO₃ Heterostructure Device

LaAlO₃/SrTiO₃ Heterointerface: 20 Years and Beyond

Polar Perturbations in Functional Oxide Heterostructures

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Stable pH sensitivity of LaAlO3/SrTiO3 interfacial electronic gas

Cited by 4 publications

References 21 publications

Effect of Surface Damage on pH Sensitivity of LaAlO3/SrTiO3 Heterostructure Device

Effect of Surface Damage on pH Sensitivity of LaAlO3/SrTiO3 Heterostructure Device

LaAlO3/SrTiO3 Heterointerface: 20 Years and Beyond

Polar Perturbations in Functional Oxide Heterostructures

Contact Info

Product

Resources

About

Effect of Surface Damage on pH Sensitivity of LaAlO₃/SrTiO₃ Heterostructure Device

Effect of Surface Damage on pH Sensitivity of LaAlO₃/SrTiO₃ Heterostructure Device

LaAlO₃/SrTiO₃ Heterointerface: 20 Years and Beyond