Stable photocurrent–voltage characteristics of perovskite single crystal detectors obtained by pulsed bias

Abstract

Photocurrent-voltage characterization is a crucial method for assessing key parameters in X-ray or γ-ray semiconductor detectors, especially the carrier mobility lifetime product. However, the high bias during photocurrent measurements tend to cause severe ion migration, which can lead to the instability and inaccuracy of the test results. Given the mixed electronic-ionic characteristics, it is imperative to devise novel methods capable of precisely measuring photocurrent-voltage characteristics under high bias conditions, free from interference caused by ion migration. In this paper, pulsed bias is employed to explore the photocurrent-voltage characteristics of MAPbBr3 single crystals. The method yields stable photocurrent-voltage characteristics at a pulsed bias of up to 30 V, proving to be effective in mitigating ion migration. Through fitting the modified Hecht equation, we determined the mobility lifetime products of 1.0 × 10-3 cm2×V-1 for hole and 2.78 × 10-3 cm2×V-1 for electron. This approach offers a promising solution for accurately measuring the transport properties of carriers in perovskite.Photocurrent-voltage characterization is a crucial method for assessing key parameters in X-ray or γ-ray semiconductor detectors, especially the carrier mobility lifetime product. However, the high bias during photocurrent measurements tend to cause severe ion migration, which can lead to the instability and inaccuracy of the test results. Given the mixed electronic-ionic characteristics, it is imperative to devise novel methods capable of precisely measuring photocurrent-voltage characteristics under high bias conditions, free from interference caused by ion migration. In this paper, pulsed bias is employed to explore the photocurrent-voltage characteristics of MAPbBr3 single crystals. The method yields stable photocurrent-voltage characteristics at a pulsed bias of up to 30 V, proving to be effective in mitigating ion migration. Through fitting the modified Hecht equation, we determined the mobility lifetime products of 1.0 × 10-3 cm2×V-1 for hole and 2.78 × 10-3 cm2×V-1 for electron. This approach offers a promising solution for accurately measuring the transport properties of carriers in perovskite.

Key issues and solutions affecting efficiency and stability of perovskite/heterojunction tandem solar cells

“…物 现优异的界面接触 [66] , 甲脒离子和草酸根离子积 聚在SnO 2 与钙钛矿埋底界面处以实现钝化作用. 关于叠层电池添加剂工程的研究报道远不止 这些, 盐酸苯乙双胍 [67] 、酒石酸钾 [68] 、正丁基溴化 铵 [69] 以及路易斯酸/碱 [70] 等均可用于钝化器件中 存在的缺陷, 添加剂调控已成为普遍应用以提高 PTSC性能的关键方法之一. 图 6 表面存在SAM锚定的NiO x 分子结构, 分子结构和侧视图 (a) MeO-2PACz [59] ; (b) MeO-4PADBC [59] ; (c) MeO-4PADBC 锚定在NiO x 纳米颗粒上 [59] Fig.…”