Stable, Solution-Processed, High-Mobility ZnO Thin-Film Transistors

Ong, Beng S.; Li, Chensha; Li, Yuning; Wu, Yiliang; Loutfy, Rafik O.

doi:10.1021/ja068876e

Cited by 442 publications

(317 citation statements)

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“…1). Pyrolysis of ZnAc is well established to lead to Zinc oxide [3,4,6,7]. Both films show very similar spectra, and both are no longer soluble in water albeit both precursors (ZnCl2 and ZnAc) are.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, inorganic semiconductors that can be processed from solution-based precursors have recently attracted significant attention as an alternative. In 2007, Ong et al [3] have demonstrated that semiconducting films of the II-VI semiconductor Zinc oxide (ZnO) can be prepared by pyrolysis of the organic precursor, Zinc acetate (ZnAc), which dissolves in relatively benign solvents (alcohols, ketones, mixtures thereof [4]). Since water-gating of precursor-route ZnO was demonstrated [5], it has become a popular semiconductor for application in electrolyte-gated thin film transistors (TFTs) [6].…”

Section: Introductionmentioning

confidence: 99%

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A New Precursor Route to Semiconducting Zinc Oxide

Althagafi

Baroot

Grell

2016

IEEE Electron Device Lett.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A New Precursor Route to Semiconducting Zinc Oxide

Althagafi

Baroot

Grell

2016

IEEE Electron Device Lett.

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“…While ZnO films comprising nanocrystals have been made [9][10][11][12] , achieving high electron mobility without gating has been elusive. We form thin films comprising these nanocrystals by supersonic expansion and subsequent impaction of the plasma effluent containing the nanocrystals onto suitable substrates.…”

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confidence: 99%

High electron mobility in thin films formed via supersonic impact deposition of nanocrystals synthesized in nonthermal plasmas

et al. 2014

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Thin films comprising semiconductor nanocrystals are emerging for applications in electronic and optoelectronic devices including light emitting diodes and solar cells. Achieving high charge carrier mobility in these films requires the identification and elimination of electronic traps on the nanocrystal surfaces. Herein, we show that in films comprising ZnO nanocrystals, an electron acceptor trap related to the presence of OH on the surface limits the conductivity. ZnO nanocrystal films were synthesized using a nonthermal plasma from diethyl zinc and oxygen and deposited by inertial impaction onto a variety of substrates. Surprisingly, coating the ZnO nanocrystals with a few nanometres of Al 2 O 3 using atomic layer deposition decreased the film resistivity by seven orders of magnitude to values as low as 0.12 O cm. Electron mobility as high as 3 cm 2 V À 1 s À 1 was observed in films comprising annealed ZnO nanocrystals coated with Al 2 O 3 .

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“…For example, metal oxides such as zinc oxide (ZnO) [17][18][19][20][21][22] , indium oxide (In 2 O 3 ) [23][24] , indium gallium oxide (InGaO) [25] , indium zinc oxide (InZnO) [18][19][20][21][22][23][24][25][26] and zinc tin oxide (ZnSnO) [27] have been synthesised using soluble precursors and implemented into TFT structures. Despite the process simplicity, excellent charge carrier mobilities have been achieved, clearly demonstrating the significant potential of this alternative processing methodology.…”

mentioning

confidence: 99%

Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm²/Vs

et al. 2010

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The ever increasing demand for high performance electronic devices that can be fabricated onto large-area substrates employing low manufacturing cost techniques has given a boost to the development of alternative types of semiconductor materials, such as organics and metal oxides, with desirable physical characteristics that are absent in their traditional inorganic counterparts. Metal oxide semiconductors, in particular, are very attractive for implementation into thin-film transistors (TFTs) [1][2] mainly because of their high charge 2 carrier mobility, high optical transparency, excellent chemical stability, mechanical stress tolerance and processing versatility [3][4][5] . Oxide semiconductors are usually grown using vacuum-based techniques such as sputtering [6][7][8] , pulsed laser deposition [9] , chemical vapour deposition [10] , and ion-assisted deposition [11][12] . Based on these methods, the synthesis of a wide range of metal oxide semiconductors with high charge carrier mobilities and low carrier concentration has been demonstrated [7] . Many of these materials have been investigated for applications in thin-film electronics where transistors with electron mobilities up to 140 cm 2 /Vs have been demonstrated [7,[11][12][13][14][15][16] . Despite the great promise however, the application of vacuum-based technologies for the deposition of complex oxide semiconductors suffers from incompatibility with large-area substrates and hence high manufacturing cost. To this end, the development of alternative deposition methods based on solution processing paradigms could provide a breakthrough in both cost and performance by marrying fabrication simplicity with high-throughput manufacturing.In recent years a wide variety of soluble precursors compounds have been examined as potential alternatives for the fabrication of oxide-based TFTs using large area deposition methods including spin casting, dip coating and spray pyrolysis. For example, metal oxides such as zinc oxide (ZnO) [17][18][19][20][21][22] , indium oxide (In 2 O 3 ) [23][24] , indium gallium oxide (InGaO) [25] , indium zinc oxide (InZnO) [18][19][20][21][22][23][24][25][26] and zinc tin oxide (ZnSnO) [27] have been synthesised using soluble precursors and implemented into TFT structures. Despite the process simplicity, excellent charge carrier mobilities have been achieved, clearly demonstrating the significant potential of this alternative processing methodology. Here we show how spray pyrolysis (SP) can be used for the deposition of doped ZnO films and the fabrication of high electron mobility TFTs onto large area substrates under ambient atmosphere. Doping is achieved by simple physical blending of the soluble precursor compounds in water or alcohol based solutions. Among the various dopants studied, transistors fabricated using Li doped ZnO were 3 found to yield the best performance with maximum electron mobility > 50 cm 2 /Vs and on/off current modulation ratio exceeding 10 6 .Preparation of the Li doped precursor solutions is described in th...

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Stable, Solution-Processed, High-Mobility ZnO Thin-Film Transistors

Cited by 442 publications

References 12 publications

A New Precursor Route to Semiconducting Zinc Oxide

A New Precursor Route to Semiconducting Zinc Oxide

High electron mobility in thin films formed via supersonic impact deposition of nanocrystals synthesized in nonthermal plasmas

Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm²/Vs

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Stable, Solution-Processed, High-Mobility ZnO Thin-Film Transistors

Cited by 442 publications

References 12 publications

A New Precursor Route to Semiconducting Zinc Oxide

A New Precursor Route to Semiconducting Zinc Oxide

High electron mobility in thin films formed via supersonic impact deposition of nanocrystals synthesized in nonthermal plasmas

Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm2/Vs

Contact Info

Product

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Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm²/Vs