Stable Two-Mode Emission from Semiconductor Quantum Dot Laser

Akahane, Kouichi; Yamamoto, Naokatsu; Kanno, Atsushi; Inagaki, Keizo; Umezawa, Toshimasa; Kawanishi, Tetsuya; Endo, Takashi; Tomomatsu, Yasunori; Yamanoi, Takahiro

doi:10.7567/apex.6.104001

Cited by 16 publications

(4 citation statements)

References 9 publications

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“…Control of the optical properties of self-assembled quantum dots (QDs) is essential for device applications such as in lasers [1][2][3], single photon sources [4][5][6], and solar cells [7][8][9]. The control of strain [10][11][12] and intermixing of Ga and In [13][14][15] in case of InAs QDs on GaAs have been reported as methods to control the QD characteristics.…”

Section: Introductionmentioning

confidence: 99%

Effects of a thin nitrogen-doped layer on terahertz dynamics in GaAs containing InAs quantum dots

Kojima

Izumi

2019

OSA Continuum

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The transient terahertz signal generated by electron diffusion that was excited by an ultrashort pulse was observed to vary with the potential structure around the surface. The formation of InAs quantum dots caused the strain field and the nitrogen atoms to further modify the potential structure around the quantum dots. The terahertz signal that was observed for various pump energies exhibited an interesting phase change. Further, the change in terahertz dynamics originated from the formation of a dilute nitrogen layer around the quantum dots. Furthermore, this change depends on the position of the nitrogen-doped layer. The results of this study provide important information for controlling the optical properties of quantum dots.

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Section: Introductionmentioning

confidence: 99%

Effects of a thin nitrogen-doped layer on terahertz dynamics in GaAs containing InAs quantum dots

Kojima

Izumi

2019

OSA Continuum

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“…Self-assembled quantum dots (QDs) have been extensively studied for various highefficiency opt-devices, including lasers [1][2][3][4][5][6][7], entangled photon sources [8][9][10][11][12], and photovoltaic devices [13][14][15][16][17][18]. When the efficiency of QD-based devices is considered, variations in the potential structure due to the lattice-mismatched strain, which leads to change in the carrier dynamics, is important.…”

Section: Introductionmentioning

confidence: 99%

Effect of lattice-mismatch strain on electron dynamics in InAs/GaAs quantum dots as seen by time-domain terahertz spectroscopy

Kojima¹,

Izumi²

2018

J. Phys. D: Appl. Phys.

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Considering the electron dynamics in the deeper area from the surface is important to improve the efficiency of optoelectronic devices. Potential variations due to InAs quantum dot (QD) growth in the GaAs crystal are investigated via measurements of terahertz electromagnetic waves emitted from the surface. In the pump-energy dependence of the time-domain signal, a phase inversion was observed in the QD sample. In addition, while the signal intensity from the InAs QD sample is maintained in the lower pump energy region, the intensity profile does not show this specific change related to the phase inversion. These results demonstrate that the potential change around QDs caused by lattice-mismatched strain can be examined using observations of the time-domain terahertz signal, which can be used to improve the device performance.

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“…[5][6][7] It is also expected that QD optical gain materials will enable high-temperature device stability and patterneffect-free data signal amplification, and so on. [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] On the other hand, Gbps-order high-speed optical modulators are critical photonic devices for optical data and high-frequency optical signal generation and distribution. In particular, inexpensive and compact Gbps-order high-speed optical modulators are expected to be used in RoF systems and as a link between short-and middle-range communications.…”

Section: Introductionmentioning

confidence: 99%

Monolithically integrated quantum dot optical modulator with semiconductor optical amplifier for thousand and original band optical communication

Yamamoto

Akahane

Umezawa

et al. 2016

Jpn. J. Appl. Phys.

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A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed with T-band (1.0 µm waveband) and O-band (1.3 µm waveband) QD optical gain materials for Gbps-order, high-speed optical data generation. The insertion loss due to coupling between the device and the optical fiber was effectively compensated for by the SOA section. It was also confirmed that the monolithic QD-OGM/SOA device enabled >4.8 Gbps optical data generation with a clear eye opening in the T-band. Furthermore, we successfully demonstrated error-free 4.8 Gbps optical data transmissions in each of the six wavelength channels over a 10-km-long photonic crystal fiber using the monolithic QD-OGM/SOA device in multiple O-band wavelength channels, which were generated by the single QD gain chip. These results suggest that the monolithic QD-OGM/SOA device will be advantageous in ultra-broadband optical frequency systems that utilize the T+O-band for short- and medium-range optical communications.

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Stable Two-Mode Emission from Semiconductor Quantum Dot Laser

Cited by 16 publications

References 9 publications

Effects of a thin nitrogen-doped layer on terahertz dynamics in GaAs containing InAs quantum dots

Effects of a thin nitrogen-doped layer on terahertz dynamics in GaAs containing InAs quantum dots

Effect of lattice-mismatch strain on electron dynamics in InAs/GaAs quantum dots as seen by time-domain terahertz spectroscopy

Monolithically integrated quantum dot optical modulator with semiconductor optical amplifier for thousand and original band optical communication

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