Stack based sense amplifier designs for reducing input-referred offset

Boley, James; Calhoun, Benton H.

doi:10.1109/isqed.2015.7085369

Cited by 7 publications

(2 citation statements)

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“…Schmitt triggers are often used to improve the robustness of a standard inverter by modifying the switching threshold. Utilizing this feature, the authors in [ 24 , 25 , 26 ] proposed the Schmitt trigger-based SA (STSA) to reduce V OS , where one example structure is shown in Figure 6 a. This structure intends to weaken the pull-down network of the inverter holding high voltages relative to that of the low-voltage inverter.…”

Section: Sram Sensing Circuits For Offset Reductionmentioning

confidence: 99%

“…However, this approach incurs area and power overhead. To reduce the V OS while minimizing the area and power overhead, various offset reducing circuit techniques have been proposed [ 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 ]. This paper aims to conduct a comparative analysis of these circuits, explaining their effectiveness in reducing the V OS and achieving power and performance benefits.…”

Section: Introductionmentioning

confidence: 99%

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Design of High-Speed, Low-Power Sensing Circuits for Nano-Scale Embedded Memory

Lee,

Park,

Jeong

2023

Sensors

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This paper comparatively reviews sensing circuit designs for the most widely used embedded memory, static random-access memory (SRAM). Many sensing circuits for SRAM have been proposed to improve power efficiency and speed, because sensing operations in SRAM dominantly determine the overall speed and power consumption of the system-on-chip. This phenomenon is more pronounced in the nanoscale era, where SRAM bit-cells implemented near minimum-sized transistors are highly influenced by variation effects. Under this condition, for stable sensing, the control signal for accessing the selected bit-cell (word-line, WL) should be asserted for a long time, leading to increases in the power dissipation and delay at the same time. By innovating sensing circuits that can reduce the WL pulse width, the sensing power and speed can be efficiently improved, simultaneously. Throughout this paper, the strength and weakness of many SRAM sensing circuits are introduced in terms of various aspects—speed, area, power, etc.

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Section: Sram Sensing Circuits For Offset Reductionmentioning

confidence: 99%