Stack friendly all-oxide 3D RRAM using GaInZnO peripheral TFT realized over glass substrates

Intrinsic constrains on thermally-assisted memristive switching

“…For example, the most straightforward application of resistance switching devices is in crossbar digital memories [8,10,13,16,21]. For such structures, the temperature increase is caused by Joule heating.…”

Pattern classification by memristive crossbar circuits using ex situ and in situ training

“…These milestones, in turn, revived interest in the development of memristor-based ANNs and led to numerous few-or single-memristor demonstrations of synaptic functionality and simple associative memory [21][22][23][24][25][26][27][28] , as well as the theoretical modelling of large-scale networks 10,[29][30][31][32][33] . Despite significant progress in memristor crossbar memories 20,[34][35][36][37] , memristor-based ANNs have proven to be significantly more challenging and have yet to be demonstrated. This paper reports the first successful experimental demonstration of pattern classification by a single-layer perceptron network implemented with a memristive crossbar circuit, in which synaptic weights are realized as conductances of titanium dioxide memristors with nanoscale-active regions.…”

Memory Select Devices

“…The rectifying oxide heterojunctions can be utilized as select devices, especially for oxide-based RRAM memory elements [25][26][27][28]. A p-NiO x /n-TiO x diode has demonstrated a rectification ratio of 10 5 at ±3 V, ON current density of 5 × 10 3 A/cm 2 (at ∼2.5 V), and ideality factor of 4.3 [25].…”

“…A p-CuO x /n-InZnO x diode achieved higher ON current density of 10 4 A/cm 2 (at ∼1.3 V). It was integrated with NiO x RRAM in a two-layer 8 × 8 crossbar array [26,27] and with Al 2 O 3 antifuse in a one-time programmable (OTP) memory [28]. Oxide p-n heterojunction was also demonstrated in pZnORh 2 O 3 /n-InGaZnO 4 and achieved on/off ratio of 10 3 (at ±5 V), ideality factor of ∼2.3, and threshold voltage of 2.1 V [29].…”