Stack structure and CoFeB composition dependence of perpendicular magnetic anisotropy employing Pt heavy metal layer

Du, Wei; Liu, Mengli; Wang, Guo‐Cai; Su, Hua; Liu, Bo; Meng, Hao; Tang, Xiaoli

doi:10.1016/j.jallcom.2022.167205

Journal of Alloys and Compounds

2022

DOI: 10.1016/j.jallcom.2022.167205

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Stack structure and CoFeB composition dependence of perpendicular magnetic anisotropy employing Pt heavy metal layer

Wei Du

Mengli Liu

Guo‐Cai Wang

et al.

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Cited by 4 publications

References 35 publications

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Enhanced Voltage‐Controlled Magnetic Anisotropy and Field‐Free Magnetization Switching Achieved with High Work Function and Opposite Spin Hall Angles in W/Pt/W SOT Tri‐Layers

Chen,

Jia,

Yang

et al. 2024

Adv Funct Materials

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Voltage‐Gated Spin‐Orbit‐Torque (VGSOT) Magnetic Random‐Access Memory (MRAM) is a promising candidate for reducing writing energy and improving writing speed in emerging memory and in‐memory computing applications. However, conventional Voltage Controlled Magnetic Anisotropy (VCMA) approaches are often inefficient due to the low VCMA coefficient at the CoFeB/MgO interface. Additionally, traditional heavy metal/perpendicular magnetic anisotropy (PMA) ferromagnet bilayers require an external magnetic field to overcome symmetry constraints and achieve deterministic SOT switching. Here, a novel and industry‐compatible SOT underlayer for next‐generation VGSOT MRAM by employing a composite heavy metal tri‐layer with a high work function is presented. This approach achieves a VCMA coefficient exceeding 100 fJ V−1m−1 through electron depletion effects, which is ten times larger than that observed with a pure W underlayer. Furthermore, it is demonstrated that this composite heavy metal SOT underlayer facilitates the integration of VCMA with opposite spin Hall angles, enabling field‐free SOT switching in industry‐compatible PMA CoFeB/MgO systems.

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Enhanced Voltage‐Controlled Magnetic Anisotropy and Field‐Free Magnetization Switching Achieved with High Work Function and Opposite Spin Hall Angles in W/Pt/W SOT Tri‐Layers

Chen,

Jia,

Yang

et al. 2024

Adv Funct Materials

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Perpendicular magnetic anisotropy properties of Co2FeSi/Pt multilayers deposited on amorphous dielectric Ta2O5

Wang,

Fu,

et al. 2024

Materials Science and Engineering: B

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Magnetization reversal of perpendicular magnetic anisotropy multilayers on polymeric substrates for flexible spintronics applications

Bevan,

Chhatoi,

Mallick

et al. 2024

Journal of Applied Physics

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Earlier demonstrations of spintronic functionality on flexible substrates have highlighted the potential for spintronics in flexible electronics applications. However, for device applications, the relationship between global magnetization reversal, as measured by hysteresis, and the local reversal processes of nucleation and growth of magnetic domains need to be understood for magnetic systems on flexible substrates. This study compares the local magnetization reversal behavior of perpendicularly magnetized Pt/CoFeB/Pt and Pt/Co/Pt on rigid and flexible polymeric substrates using magneto-optical Kerr effect magnetometry and microscopy. It is shown that while the magnetic hysteresis is comparable, the local details of the nucleation and field driven reversal are quite different and are attributed to the greater variability of the surface structures of the polymeric substrates, which has implications for consistency in device performance.

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Stack structure and CoFeB composition dependence of perpendicular magnetic anisotropy employing Pt heavy metal layer

Cited by 4 publications

References 35 publications

Enhanced Voltage‐Controlled Magnetic Anisotropy and Field‐Free Magnetization Switching Achieved with High Work Function and Opposite Spin Hall Angles in W/Pt/W SOT Tri‐Layers

Enhanced Voltage‐Controlled Magnetic Anisotropy and Field‐Free Magnetization Switching Achieved with High Work Function and Opposite Spin Hall Angles in W/Pt/W SOT Tri‐Layers

Perpendicular magnetic anisotropy properties of Co2FeSi/Pt multilayers deposited on amorphous dielectric Ta2O5

Magnetization reversal of perpendicular magnetic anisotropy multilayers on polymeric substrates for flexible spintronics applications

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