Stacked 3D RRAM Array with Graphene/CNT as Edge Electrodes

Bai, Yanling; Wu, Huaqiang; Wang, Kun; Wu, Riga; Song, Lin; Li, Tianyi; Wang, Jiangtao; Qian, He

doi:10.1038/srep13785

Cited by 42 publications

(32 citation statements)

References 27 publications

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“…With the development of memristor research for about half a century, RRAM devices received considerable attention as the most typical memristor. Apart from research on device performance, recent research was directed toward the study of materials with resistive switching (RS) function, such as binary transition metal oxides (TiO x , AlO x , and NiO x ) [3,[107][108][109][110][111], perovskite compounds (CH 3 NH 3 PbI 3 and CsPbBr 3 ) [54,55,112], ferromagnetic materials [112,113], biological materials [114,115], and graphene-based materials (graphene and GO) [30,116].…”

Section: Memristormentioning

confidence: 99%

Memristive Non-Volatile Memory Based on Graphene Materials

Shen

Zhao

et al. 2020

Micromachines

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Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in the industry of neuromorphic systems and artificial intelligence (AI), due its advantages such as fast operation speed, low power consumption, and high device density. Graphene and related materials (GRMs), especially graphene oxide (GO), acting as active materials for RRAM devices, are considered as a promising alternative to other materials including metal oxides and perovskite materials. Herein, an overview of GRM-based RRAM devices is provided, with discussion about the properties of GRMs, main operation mechanisms for resistive switching (RS) behavior, figure of merit (FoM) summary, and prospect extension of GRM-based RRAM devices. With excellent physical and chemical advantages like intrinsic Young’s modulus (1.0 TPa), good tensile strength (130 GPa), excellent carrier mobility (2.0 × 105 cm2∙V−1∙s−1), and high thermal (5000 Wm−1∙K−1) and superior electrical conductivity (1.0 × 106 S∙m−1), GRMs can act as electrodes and resistive switching media in RRAM devices. In addition, the GRM-based interface between electrode and dielectric can have an effect on atomic diffusion limitation in dielectric and surface effect suppression. Immense amounts of concrete research indicate that GRMs might play a significant role in promoting the large-scale commercialization possibility of RRAM devices.

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Section: Memristormentioning

confidence: 99%

Memristive Non-Volatile Memory Based on Graphene Materials

Shen

Zhao

et al. 2020

Micromachines

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“…器件从而提高及拓展器件性能的想法正越来越受到研究人员的重视 [155][156][157][158] . 石墨烯通常可以用作RRAM 的电极 [159][160][161] 、纳米尺寸电极 [162,163] 或者侧边电极 (图5) [164,165] , 也可以用作电极与阻变层之间的界面插层 [166][167][168][169] , 具有纳米孔洞的石墨烯可以用来实现导电细丝的限域生长 [170,171] , 还可以通过在石墨烯中形成纳米缝隙构造RRAM器件 [172] . 石墨烯RRAM器件的主要叠能力.…”

Section: 尽管多元金属氧化物材料构成的Rram器件也表unclassified

Research progresses of resistive random access memory

Long¹,

Liu²,

Lv³

et al. 2016

Sci. Sin.-Phys. Mech. Astron.

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“…[22,23] Conventional "wood-pile structure" is to repeatably stack planar crossbar layers, while shared vertical electrodes (VEs) are adopted in another 3D scheme. [24][25][26][27][28] Compared with the traditional 3D cross-point structure, the 3D vertical structure requires only one critical lithography step behavior was obtained from the Ta 14.1% :SiO 2 device. In later studies, we kept DC power at 10 W for Ta and RF power of 270 W for SiO 2 during the co-sputtering process.…”

Section: Introductionmentioning

confidence: 99%

Scalable 3D Ta:SiO_x Memristive Devices

Jiang

Lin

et al. 2019

Adv Elect Materials

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and hence is more bit cost-efficient. [25] However, 3D vertical structure with SiO x switching layer has not been achieved yet.Herein, we report a Ta:SiO 2 device with reliable bipolar memristive switching. After introducing Ta cations, our devices showed high uniformity, superior endurance (>10 9 cycles), fast switching speed, reliable retention, and analog modulation of device conductance. In addition, we studied the scaling ability of the Ta:SiO 2 -based 3D vertical devices with sizes ranging from micro-to nanoscale (as small as 60 × 15 nm 2 ). The switching behavior shows weak dependence on area size when the device is relatively large; after that, state conductance and the operation current decrease when the device is further scaled down. We built 3D devices and achieved similar memristive behavior from both the top and bottom cells in a two-layer vertical device. Our work confirms that doping SiO x is an efficient way to tailor properties of memristive devices, which has great scalability and stackability. Results and Discussion Ta:SiO 2 Thin Films Prepared by Co-SputteringThe Ta:SiO 2 thins film were prepared by co-sputtering from Ta and SiO 2 targets. Figure 1 schematically shows the principle of the co-sputtering process, in which two targets are sputtered simultaneously in the chamber. The SiO 2 target was sputtered at a constant radiofrequency (RF) power of 270 W, while the Ta target was sputtered with varied direct current (DC) powers ranging from 0 to 20 W. The atomic ratios for Ta dopants sputtered at 10 and 20 W were determined to be 14.1% and 22.5%, respectively. More importantly, the Ta in the thin films is in different valence states, as revealed by X-ray photoemission spectroscopic (XPS) characterization (Figure 2). The Ta 4f XPS spectra from films after 4 min Ar + sputtering inside the chamber were deconvolved into three chemical states of Ta: fully oxidic (Ta 5+ ), suboxidic, and metallic states. [29] The atomic ratios of the three states were calculated to be 57.65%/25.97%/16.39% (Figure 2a) and 34.91%/29.81%/35.28% (Figure 2b), respectively, for the two films prepared with different DC powers on Ta. The concentration of the Ta metallic state increased evidently in the film with a higher Ta sputtering power.From electrical measurements (see Figure S1 in the Supporting Information), the device without Ta doping was hard breakdown, while the device based on Ta 22.5% :SiO 2 was directly shorted. On the contrary, reliable memristive switching A highly reliable memristive device based on tantalum-doped silicon oxide is reported, which exhibits high uniformity, robust endurance (≈1 × 10 9 cycles), fast switching speed, long retention, and analog conductance modulation. Devices with junction areas ranging from microscale to as small as 60 × 15 nm 2 are fabricated and electrically characterized. ON-/OFF-conductance and reset current show weak area dependence when the device is relatively large, and they become proportional to the device area when further scaled down. Two-layer devices with repeatabl...

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Stacked 3D RRAM Array with Graphene/CNT as Edge Electrodes

Cited by 42 publications

References 27 publications

Memristive Non-Volatile Memory Based on Graphene Materials

Memristive Non-Volatile Memory Based on Graphene Materials

Research progresses of resistive random access memory

Scalable 3D Ta:SiO_x Memristive Devices

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Stacked 3D RRAM Array with Graphene/CNT as Edge Electrodes

Cited by 42 publications

References 27 publications

Memristive Non-Volatile Memory Based on Graphene Materials

Memristive Non-Volatile Memory Based on Graphene Materials

Research progresses of resistive random access memory

Scalable 3D Ta:SiOx Memristive Devices

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Resources

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Scalable 3D Ta:SiO_x Memristive Devices