2022
DOI: 10.1007/s12633-022-02190-9
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Stacked Lateral Gate-All-Around Metal–Oxide–Semiconductor Field-Effect Transistors and Their Three-Dimensional Integrated Circuits

Abstract: According to the International Roadmap for Devices and Systems, gate-all-around (GAA, also known as a surrounding gate) metal–oxide–semiconductor field-effect transistor (MOSFET) will be the main device in integrated circuits (ICs). Lateral GAA (LGAA) MOSFETs have been applied in CMOS logic circuits from a 3-nm technology node. However, further shrinkage of the contacted gate pitch is difficult owing to the physics and processing limitations. Three-dimensional (3D) stacking of chips or wafers is therefore wide… Show more

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Cited by 5 publications
(1 citation statement)
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“…Even though the industry of electronic computers pitches their semiconductor transistors in nanometer scale, the distance between gates (also contacted gate pitch, CGP) limits miniaturization as it has reached physical limitations. [24][25][26][27] Thus, efforts in further miniaturization inspired exploring new computing materials beyond semiconductor technology including molecules like nucleic acids.…”
Section: Advantages Of Dna-based Circuitsmentioning
confidence: 99%
“…Even though the industry of electronic computers pitches their semiconductor transistors in nanometer scale, the distance between gates (also contacted gate pitch, CGP) limits miniaturization as it has reached physical limitations. [24][25][26][27] Thus, efforts in further miniaturization inspired exploring new computing materials beyond semiconductor technology including molecules like nucleic acids.…”
Section: Advantages Of Dna-based Circuitsmentioning
confidence: 99%