Structural characterization of 2D nanomaterials is an important step towards their future applications. In this work we carried out imaging and structural analysis of 2D h-BN produced by chemicalexfoliation, emphasizing the stacking order in few-layer sheets. Our analysis, for the first time has shown conclusively that non-bulk stacking can exist in 2D h-BN.Compounds with layered crystal structure are an emergent and diverse source of two-dimensional nanomaterials with high specic surface areas that are important for applications in sensing, 1 catalysis, 2 energy harvesting 3 and storage. 4 Whilst graphene is the most renowned, there is considerable interest in other layered materials such as 2D hexagonal boron nitride (h-BN). Electronically, h-BN is a dielectric with direct bandgap of approximately 5.8 eV 5 making it a candidate for applications as a substrate in graphene-based eld effect transistors 6,7 and a top-gate dielectric.8 Chemical exfoliation methods of bulk h-BN has been shown to produce useful quantities of monolayer and stacked bi-and few-layer 9 and a rapid growth in the technological applications of these is expected to follow. For these applications the structural properties of the material as synthesised will play an important role in determining the intrinsic properties and subsequent performance in devices.As we examine the structure and stacking of h-BN, it is important to note the possible high-symmetry structural models projected along the [001] and [110] directions based on variations of both "simple" and "Bernal" stacking oen reported in the literature for h-BN 10-12 (Scheme 1). These include: AA 0 stacking, usually found in the bulk h-BN material, where atomic columns projected along the [001] direction consist of alternating B and N atoms (Scheme 1a); AA stacking where monolayer structure repeats itself; and two other high symmetry congurations AB and ABC (Scheme 1c and d respectively) formed by shiing the h-BN layers by 1/3 and 1/3, 2/3 a unit cell as compared to the AA, respectively. Theoretical calculations indicate similar cohesive energies for all these models 10-12 where the AA type (which has not been observed experimentally in pure h-BN) is calculated as least energetically favourable.12 Moreover, AB stacking was shown to be the most stable for h-BN bilayers.11 Van der Waals forces have been predicted to determine the interlayer distance and electrostatic forces have been shown to dictate the optimal stacking sequence.13 This suggests that modications of stacking arrangements may occur through intercalation of ionic species between the layers and at the edges. In fact, a theoretical calculations of h-BN intercalated with neutral potassium suggest the AA stacking between the h-BN layers.